Coherent heteroepitaxy of Bi2 Se3 on GaAs (111)B

A. Richardella; D. M. Zhang; J. S. Lee; A. Koser; D. W. Rench; A. L. Yeats; B. B. Buckley; D. D. Awschalom; N. Samarth

doi:10.1063/1.3532845

Coherent heteroepitaxy of Bi₂ Se₃ on GaAs (111)B

A. Richardella, D. M. Zhang, J. S. Lee, A. Koser, D. W. Rench, A. L. Yeats, B. B. Buckley, D. D. Awschalom, N. Samarth

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Abstract

We report the heteroepitaxy of single crystal thin films of Bi₂ Se₃ on the (111)B surface of GaAs by molecular beam epitaxy. We find that Bi₂ Se₃ grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate. By optimizing the growth of a very thin GaAs buffer layer before growing the Bi₂ Se₃, we demonstrate the growth of thin films with atomically flat terraces over hundreds of nanometers. Initial time-resolved Kerr rotation measurements herald opportunities for probing coherent spin dynamics at the interface between a candidate topological insulator and a large class of GaAs-based heterostructures.

Original language	English (US)
Article number	262104
Journal	Applied Physics Letters
Volume	97
Issue number	26
DOIs	https://doi.org/10.1063/1.3532845
State	Published - Dec 27 2010

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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@article{edf9e1931a94402597eed09864bd3df0,

title = "Coherent heteroepitaxy of Bi2 Se3 on GaAs (111)B",

abstract = "We report the heteroepitaxy of single crystal thin films of Bi2 Se3 on the (111)B surface of GaAs by molecular beam epitaxy. We find that Bi2 Se3 grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate. By optimizing the growth of a very thin GaAs buffer layer before growing the Bi2 Se3, we demonstrate the growth of thin films with atomically flat terraces over hundreds of nanometers. Initial time-resolved Kerr rotation measurements herald opportunities for probing coherent spin dynamics at the interface between a candidate topological insulator and a large class of GaAs-based heterostructures.",

author = "A. Richardella and Zhang, \{D. M.\} and Lee, \{J. S.\} and A. Koser and Rench, \{D. W.\} and Yeats, \{A. L.\} and Buckley, \{B. B.\} and Awschalom, \{D. D.\} and N. Samarth",

note = "Funding Information: We thank Josh Maier for preparing the cross-sectional TEM specimen. This work was supported by the Penn State MRSEC (Grant No. NSF-DMR-0820404) through a seed grant and the REU program, and partially by ONR Grant Nos. N00014-09-1-0221 and N00014-09-1-0309. We acknowledge the use of the NSF National Nanofabrication Users Network Facilities at Penn State and UCSB.",

year = "2010",

month = dec,

day = "27",

doi = "10.1063/1.3532845",

language = "English (US)",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "26",

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TY - JOUR

T1 - Coherent heteroepitaxy of Bi2 Se3 on GaAs (111)B

AU - Richardella, A.

AU - Zhang, D. M.

AU - Lee, J. S.

AU - Koser, A.

AU - Rench, D. W.

AU - Yeats, A. L.

AU - Buckley, B. B.

AU - Awschalom, D. D.

AU - Samarth, N.

N1 - Funding Information: We thank Josh Maier for preparing the cross-sectional TEM specimen. This work was supported by the Penn State MRSEC (Grant No. NSF-DMR-0820404) through a seed grant and the REU program, and partially by ONR Grant Nos. N00014-09-1-0221 and N00014-09-1-0309. We acknowledge the use of the NSF National Nanofabrication Users Network Facilities at Penn State and UCSB.

PY - 2010/12/27

Y1 - 2010/12/27

N2 - We report the heteroepitaxy of single crystal thin films of Bi2 Se3 on the (111)B surface of GaAs by molecular beam epitaxy. We find that Bi2 Se3 grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate. By optimizing the growth of a very thin GaAs buffer layer before growing the Bi2 Se3, we demonstrate the growth of thin films with atomically flat terraces over hundreds of nanometers. Initial time-resolved Kerr rotation measurements herald opportunities for probing coherent spin dynamics at the interface between a candidate topological insulator and a large class of GaAs-based heterostructures.

AB - We report the heteroepitaxy of single crystal thin films of Bi2 Se3 on the (111)B surface of GaAs by molecular beam epitaxy. We find that Bi2 Se3 grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate. By optimizing the growth of a very thin GaAs buffer layer before growing the Bi2 Se3, we demonstrate the growth of thin films with atomically flat terraces over hundreds of nanometers. Initial time-resolved Kerr rotation measurements herald opportunities for probing coherent spin dynamics at the interface between a candidate topological insulator and a large class of GaAs-based heterostructures.

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DO - 10.1063/1.3532845

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VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 262104

ER -

Coherent heteroepitaxy of Bi₂ Se₃ on GaAs (111)B

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