Coherent transfer of spin through a semiconductor heterointerface

I. Malajovich; J. M. Kikkawa; D. D. Awschalom; J. J. Berry; N. Samarth

doi:10.1103/PhysRevLett.84.1015

Coherent transfer of spin through a semiconductor heterointerface

I. Malajovich, J. M. Kikkawa, D. D. Awschalom, J. J. Berry, N. Samarth

Physics

Research output: Contribution to journal › Article › peer-review

126 Scopus citations

Abstract

Spin transport between two semiconductors of widely different band gaps is time resolved by two-color pump-probe optical spectroscopy. Electron spin coherence is created in a GaAs substrate and subsequently appears in an adjacent ZnSe epilayer at temperatures ranging from 5 to 300 K. The data show that spin information can be protected by transport to regions of low spin decoherence, and regional boundaries used to control the resulting spin coherent phase.

Original language	English (US)
Pages (from-to)	1015-1018
Number of pages	4
Journal	Physical review letters
Volume	84
Issue number	5
DOIs	https://doi.org/10.1103/PhysRevLett.84.1015
State	Published - Jan 31 2000

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevLett.84.1015

Cite this

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title = "Coherent transfer of spin through a semiconductor heterointerface",

abstract = "Spin transport between two semiconductors of widely different band gaps is time resolved by two-color pump-probe optical spectroscopy. Electron spin coherence is created in a GaAs substrate and subsequently appears in an adjacent ZnSe epilayer at temperatures ranging from 5 to 300 K. The data show that spin information can be protected by transport to regions of low spin decoherence, and regional boundaries used to control the resulting spin coherent phase.",

author = "I. Malajovich and Kikkawa, {J. M.} and Awschalom, {D. D.} and Berry, {J. J.} and N. Samarth",

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AU - Malajovich, I.

AU - Kikkawa, J. M.

AU - Awschalom, D. D.

AU - Berry, J. J.

AU - Samarth, N.

PY - 2000/1/31

Y1 - 2000/1/31

N2 - Spin transport between two semiconductors of widely different band gaps is time resolved by two-color pump-probe optical spectroscopy. Electron spin coherence is created in a GaAs substrate and subsequently appears in an adjacent ZnSe epilayer at temperatures ranging from 5 to 300 K. The data show that spin information can be protected by transport to regions of low spin decoherence, and regional boundaries used to control the resulting spin coherent phase.

AB - Spin transport between two semiconductors of widely different band gaps is time resolved by two-color pump-probe optical spectroscopy. Electron spin coherence is created in a GaAs substrate and subsequently appears in an adjacent ZnSe epilayer at temperatures ranging from 5 to 300 K. The data show that spin information can be protected by transport to regions of low spin decoherence, and regional boundaries used to control the resulting spin coherent phase.

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Coherent transfer of spin through a semiconductor heterointerface

Abstract

All Science Journal Classification (ASJC) codes

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