TY - JOUR
T1 - Coherently strained epitaxial Pb(Zr1-xTix)O 3 thin films
AU - Johnson-Wilke, Raegan L.
AU - Tinberg, Daniel S.
AU - Yeager, C.
AU - Qu, Weiguo
AU - Fong, Dillon D.
AU - Fister, Timothy T.
AU - Streiffer, Stephen K.
AU - Han, Yisong
AU - Reaney, Ian M.
AU - Trolier-Mckinstry, Susan
N1 - Funding Information:
R.L.J.-W., D.S.T., C.Y., and S.T.-M. were funded through Grants DMR-0602770 and DMR-0820404 from the National Science Foundation. D.D.F., T.T.F., and S.K.S. were supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering. The use of the Advanced Photon Source was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. We would like to thank Dr. Jenia Karapetrova at Sector 33BM and Peter Baldo at Argonne National Laboratory for their assistance during the synchrotron diffraction experiments.
PY - 2013/10/28
Y1 - 2013/10/28
N2 - Coherently strained Pb(Zr1-xTix)O3, 0.2 ≤ x ≤ 0.35, thin films were grown by pulsed laser deposition on (001) and (111) oriented SrTiO3 substrates. A buffer layer of Pb(Zr 0.6Ti0.4)O3 was used to improve the lattice matching and induce compressive strain in Zr-rich compositions. The (001) pc (pc = pseudocubic) films showed an increased ferroelectric transition temperature, TC, compared to bulk ceramics, but the transition from an untilted to a tilted ferroelectric (TTilt) exhibited only a modest increase in temperature. This suggests that it may be possible to enlarge the untilted ferroelectric phase field by compressive strain. Consistent with previous work on relaxed PZT films, coherently strained PZT films do not exhibit an abrupt transition from an untilted to a tilted state; rather, a region of non-zero tilt exists above TTilt. (111)pc films also showed an increased ferroelectric transition temperature with a weak strain dependence on TTilt. The compressive strain in (111)pc films induced a preferred domain structure with only 180° domain walls, in contrast to bulk materials and relaxed films which are polydomain.
AB - Coherently strained Pb(Zr1-xTix)O3, 0.2 ≤ x ≤ 0.35, thin films were grown by pulsed laser deposition on (001) and (111) oriented SrTiO3 substrates. A buffer layer of Pb(Zr 0.6Ti0.4)O3 was used to improve the lattice matching and induce compressive strain in Zr-rich compositions. The (001) pc (pc = pseudocubic) films showed an increased ferroelectric transition temperature, TC, compared to bulk ceramics, but the transition from an untilted to a tilted ferroelectric (TTilt) exhibited only a modest increase in temperature. This suggests that it may be possible to enlarge the untilted ferroelectric phase field by compressive strain. Consistent with previous work on relaxed PZT films, coherently strained PZT films do not exhibit an abrupt transition from an untilted to a tilted state; rather, a region of non-zero tilt exists above TTilt. (111)pc films also showed an increased ferroelectric transition temperature with a weak strain dependence on TTilt. The compressive strain in (111)pc films induced a preferred domain structure with only 180° domain walls, in contrast to bulk materials and relaxed films which are polydomain.
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U2 - 10.1063/1.4825215
DO - 10.1063/1.4825215
M3 - Article
AN - SCOPUS:84887305045
SN - 0021-8979
VL - 114
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 16
M1 - 164104
ER -