TY - JOUR
T1 - Cold-Sintered C0G Multilayer Ceramic Capacitors
AU - Wang, Dawei
AU - Zhou, Di
AU - Song, Kaixin
AU - Feteira, Antonio
AU - Randall, Clive A.
AU - Reaney, Ian M.
N1 - Funding Information:
The authors acknowledge the Synthesizing 3D Metamaterials for RF, Microwave and THz Applications EPSRC (EP/N010493/1) and Sustainability and Substitution of Functional Materials and Devices EPSRC (EP/L017563/1) for funding and supporting this work.
Publisher Copyright:
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2019/7
Y1 - 2019/7
N2 - Multilayer ceramic capacitors (MLCCs) based on (Bi0.95Li0.05)(V0.9Mo0.1)O4-Na2Mo2O7 (BLVMO-NMO), with εr = 39, temperature coefficient of capacitance, TCC ≈ ±0.01%, and tan δ = 0.01 at 1 MHz, are successfully fabricated by a cold-sintering process at 150 °C. Scanning electron microscopy of the MLCCs combined with EDS mapping, X-ray diffraction, and Raman spectroscopy reveals well-laminated and undistorted dielectric layers composed of BLVMO and NMO discrete phases separated by Ag internal electrodes. Prototypes show comparable properties to C0G MLCCs (TCC = ±30 ppm °C−1 from −55 to +125 °C) currently commercially fabricated at 1100 °C using CaZrO3-based dielectrics with glass sintering aids and Ni internal electrodes.
AB - Multilayer ceramic capacitors (MLCCs) based on (Bi0.95Li0.05)(V0.9Mo0.1)O4-Na2Mo2O7 (BLVMO-NMO), with εr = 39, temperature coefficient of capacitance, TCC ≈ ±0.01%, and tan δ = 0.01 at 1 MHz, are successfully fabricated by a cold-sintering process at 150 °C. Scanning electron microscopy of the MLCCs combined with EDS mapping, X-ray diffraction, and Raman spectroscopy reveals well-laminated and undistorted dielectric layers composed of BLVMO and NMO discrete phases separated by Ag internal electrodes. Prototypes show comparable properties to C0G MLCCs (TCC = ±30 ppm °C−1 from −55 to +125 °C) currently commercially fabricated at 1100 °C using CaZrO3-based dielectrics with glass sintering aids and Ni internal electrodes.
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U2 - 10.1002/aelm.201900025
DO - 10.1002/aelm.201900025
M3 - Article
AN - SCOPUS:85065160982
SN - 2199-160X
VL - 5
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
IS - 7
M1 - 1900025
ER -
