Abstract
Using silica (glass) as a model material, an approach is presented whereby chemical-mechanical polishing (CMP) of oxide substrates may be visualized as an adsorptive removal process. The adsorption of substrate-derived species is quantified by treating it as a surface complexation reaction. Mass action equations are derived for the relevant surface reactions (complex formation, and protonation/deprotonation of surface hydroxyls). By combining these equations with mass balances on surface sites and dissolved species, it is shown that the surface concentration of substrate-derived species (and, therefore, the material removal rate) goes through a maximum as the point of zero charge (pzc) of the abrasive particle increases. Further, it is shown that the surface concentration of substrate-derived species (and, therefore, the material removal rate) is highest for the abrasive material whose pzc coincides with the pH of the polishing slurry.
Original language | English (US) |
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Pages | 83-91 |
Number of pages | 9 |
State | Published - Dec 1 2003 |
Event | Chemical Mechanical Planarization VI - Proceddings of the International Symposium - Orlando, FL., United States Duration: Oct 12 2003 → Oct 17 2003 |
Other
Other | Chemical Mechanical Planarization VI - Proceddings of the International Symposium |
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Country/Territory | United States |
City | Orlando, FL. |
Period | 10/12/03 → 10/17/03 |
All Science Journal Classification (ASJC) codes
- General Engineering