Comment on "E' centers and nitrogen-related defects in silicon dioxide films"

W. L. Warren; P. M. Lenahan

doi:10.1063/1.105847

Comment on "E' centers and nitrogen-related defects in silicon dioxide films"

W. L. Warren, P. M. Lenahan

Research output: Contribution to journal › Review article › peer-review

1 Scopus citations

Abstract

The defect centers in silicon dioxide films reported earlier (ref. 1), are discussed. ESR spectra were recorded at higher microwave power in order to facilitate detection of N dangling-bonds. Such bonds were not observed in any significant concentration.(AIP).

Original language	English (US)
Pages (from-to)	2904
Number of pages	1
Journal	Applied Physics Letters
Volume	59
Issue number	22
DOIs	https://doi.org/10.1063/1.105847
State	Published - 1991

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.105847

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title = "Comment on {"}E' centers and nitrogen-related defects in silicon dioxide films{"}",

abstract = "The defect centers in silicon dioxide films reported earlier (ref. 1), are discussed. ESR spectra were recorded at higher microwave power in order to facilitate detection of N dangling-bonds. Such bonds were not observed in any significant concentration.(AIP).",

author = "Warren, {W. L.} and Lenahan, {P. M.}",

year = "1991",

doi = "10.1063/1.105847",

language = "English (US)",

volume = "59",

pages = "2904",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "22",

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T1 - Comment on "E' centers and nitrogen-related defects in silicon dioxide films"

AU - Warren, W. L.

AU - Lenahan, P. M.

PY - 1991

Y1 - 1991

N2 - The defect centers in silicon dioxide films reported earlier (ref. 1), are discussed. ESR spectra were recorded at higher microwave power in order to facilitate detection of N dangling-bonds. Such bonds were not observed in any significant concentration.(AIP).

AB - The defect centers in silicon dioxide films reported earlier (ref. 1), are discussed. ESR spectra were recorded at higher microwave power in order to facilitate detection of N dangling-bonds. Such bonds were not observed in any significant concentration.(AIP).

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DO - 10.1063/1.105847

M3 - Review article

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SP - 2904

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Comment on "E' centers and nitrogen-related defects in silicon dioxide films"

Abstract

All Science Journal Classification (ASJC) codes

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