Abstract
The defect centers in silicon dioxide films reported earlier (ref. 1), are discussed. ESR spectra were recorded at higher microwave power in order to facilitate detection of N dangling-bonds. Such bonds were not observed in any significant concentration.(AIP).
Original language | English (US) |
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Pages (from-to) | 2904 |
Number of pages | 1 |
Journal | Applied Physics Letters |
Volume | 59 |
Issue number | 22 |
DOIs | |
State | Published - 1991 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)