Comment on "theory of defect levels and the 'band gap problem' in silicon"

Blair R. Tuttle; Sokrates T. Pantelides

doi:10.1103/PhysRevLett.101.089701

Comment on "theory of defect levels and the 'band gap problem' in silicon"

Blair R. Tuttle, Sokrates T. Pantelides

Research output: Contribution to journal › Review article › peer-review

6 Scopus citations

Abstract

A Comment on the Letter by Peter A. Schultz, Phys. Rev. Lett.PRLTAO0031-9007 96, 246401 (2006)10.1103/PhysRevLett.96.246401. The authors of the Letter offer a Reply.

Original language	English (US)
Article number	089701
Journal	Physical Review Letters
Volume	101
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevLett.101.089701
State	Published - Aug 21 2008

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevLett.101.089701

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abstract = "A Comment on the Letter by Peter A. Schultz, Phys. Rev. Lett.PRLTAO0031-9007 96, 246401 (2006)10.1103/PhysRevLett.96.246401. The authors of the Letter offer a Reply.",

author = "Tuttle, {Blair R.} and Pantelides, {Sokrates T.}",

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N2 - A Comment on the Letter by Peter A. Schultz, Phys. Rev. Lett.PRLTAO0031-9007 96, 246401 (2006)10.1103/PhysRevLett.96.246401. The authors of the Letter offer a Reply.

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Comment on "theory of defect levels and the 'band gap problem' in silicon"

Abstract

All Science Journal Classification (ASJC) codes

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