TY - GEN
T1 - Comparative Advantages of 2T-nC FeRAM in Empowering High Density 3D Ferroelectric Capacitor Memory
AU - Deng, Shan
AU - Xiao, Yi
AU - Zhao, Zijian
AU - Huang, Tzu Jung
AU - Kampfe, Thomas
AU - Narayanan, Vijaykrishnan
AU - Ni, Kai
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - In this work, we study ferroelectric capacitor memories and demonstrate comparative advantages of 2T-nC (Two transistors-n metal-ferroelectric-metal (MFM) capacitors) in scalability, reliability, and feasibility of dense 3D integration and operation. We show that: i) the sensing and scalability issues of conventional 1T-1C FeRAM rooted in its charge-based sensing; ii) 1T-1C FeMFET suffers from the poor reliability and scaling challenges; iii) the 2T-nC structure can be exploited to address their issues in scalability, density and reliability; iv) through comprehensive experimental and theoretical studies, the design space of 2T-nC devices is explored; v) the integration and operation of 2T-nC FeRAM arrays in 2D and 3D configurations is investigated, demonstrating their potential for improved density and operation.
AB - In this work, we study ferroelectric capacitor memories and demonstrate comparative advantages of 2T-nC (Two transistors-n metal-ferroelectric-metal (MFM) capacitors) in scalability, reliability, and feasibility of dense 3D integration and operation. We show that: i) the sensing and scalability issues of conventional 1T-1C FeRAM rooted in its charge-based sensing; ii) 1T-1C FeMFET suffers from the poor reliability and scaling challenges; iii) the 2T-nC structure can be exploited to address their issues in scalability, density and reliability; iv) through comprehensive experimental and theoretical studies, the design space of 2T-nC devices is explored; v) the integration and operation of 2T-nC FeRAM arrays in 2D and 3D configurations is investigated, demonstrating their potential for improved density and operation.
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U2 - 10.1109/IEDM45741.2023.10413855
DO - 10.1109/IEDM45741.2023.10413855
M3 - Conference contribution
AN - SCOPUS:85185574891
T3 - Technical Digest - International Electron Devices Meeting, IEDM
BT - 2023 International Electron Devices Meeting, IEDM 2023
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2023 International Electron Devices Meeting, IEDM 2023
Y2 - 9 December 2023 through 13 December 2023
ER -