Comparing the structure and behavior of point defects in silicon oxynitride gate dielectrics formed by NH3-nitridation and N2O-growth/nitridation

J. T. Yount; P. M. Lenahan; N. S. Saks; G. A. Brown

doi:10.1557/proc-338-31

Comparing the structure and behavior of point defects in silicon oxynitride gate dielectrics formed by NH₃-nitridation and N₂O-growth/nitridation

J. T. Yount
, P. M. Lenahan
, N. S. Saks
, G. A. Brown

Engineering Science and Mechanics

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this work, an electron spin resonance study of NH₃-nitrided, N₂O-nitrided, and N₂O-grown oxides yields information relating the process history, point defect structure, and electrical behavior. NH₃-nitridation is responsible for the introduction of bridging nitrogen centers, high capture cross section neutral electron traps, while N₂O-processed dielectrics never exhibit these defects. In addition, structural changes at the interface due to nitridation result in observable differences in the interfacial defects.

Original language	English (US)
Pages (from-to)	31-36
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	338
DOIs	https://doi.org/10.1557/proc-338-31
State	Published - 1994
Event	Proceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 5 1994 → Apr 8 1994

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-338-31

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title = "Comparing the structure and behavior of point defects in silicon oxynitride gate dielectrics formed by NH3-nitridation and N2O-growth/nitridation",

abstract = "In this work, an electron spin resonance study of NH3-nitrided, N2O-nitrided, and N2O-grown oxides yields information relating the process history, point defect structure, and electrical behavior. NH3-nitridation is responsible for the introduction of bridging nitrogen centers, high capture cross section neutral electron traps, while N2O-processed dielectrics never exhibit these defects. In addition, structural changes at the interface due to nitridation result in observable differences in the interfacial defects.",

author = "Yount, \{J. T.\} and Lenahan, \{P. M.\} and Saks, \{N. S.\} and Brown, \{G. A.\}",

year = "1994",

doi = "10.1557/proc-338-31",

language = "English (US)",

volume = "338",

pages = "31--36",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

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TY - JOUR

T1 - Comparing the structure and behavior of point defects in silicon oxynitride gate dielectrics formed by NH3-nitridation and N2O-growth/nitridation

AU - Yount, J. T.

AU - Lenahan, P. M.

AU - Saks, N. S.

AU - Brown, G. A.

PY - 1994

Y1 - 1994

N2 - In this work, an electron spin resonance study of NH3-nitrided, N2O-nitrided, and N2O-grown oxides yields information relating the process history, point defect structure, and electrical behavior. NH3-nitridation is responsible for the introduction of bridging nitrogen centers, high capture cross section neutral electron traps, while N2O-processed dielectrics never exhibit these defects. In addition, structural changes at the interface due to nitridation result in observable differences in the interfacial defects.

AB - In this work, an electron spin resonance study of NH3-nitrided, N2O-nitrided, and N2O-grown oxides yields information relating the process history, point defect structure, and electrical behavior. NH3-nitridation is responsible for the introduction of bridging nitrogen centers, high capture cross section neutral electron traps, while N2O-processed dielectrics never exhibit these defects. In addition, structural changes at the interface due to nitridation result in observable differences in the interfacial defects.

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UR - https://www.scopus.com/pages/publications/0028713771#tab=citedBy

U2 - 10.1557/proc-338-31

DO - 10.1557/proc-338-31

M3 - Conference article

AN - SCOPUS:0028713771

SN - 0272-9172

VL - 338

SP - 31

EP - 36

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1994 MRS Spring Meeting

Y2 - 5 April 1994 through 8 April 1994

ER -

Comparing the structure and behavior of point defects in silicon oxynitride gate dielectrics formed by NH₃-nitridation and N₂O-growth/nitridation

Abstract

All Science Journal Classification (ASJC) codes

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