TY - GEN
T1 - Comparison of AC and DC BTI in SiC Power MOSFETs
AU - Ghosh, Amartya K.
AU - Awadelkarim, Osama O.
AU - Hao, Jifa
AU - Suliman, Samia
AU - Wang, Xinyu
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - In this work we compared AC and DC bias temperature instability (BTI) degradations induced by stressing the channel and Junction-FET regions in 4H polytype n-channel Silicon Carbide (SiC) based power MOSFETs. We observed that the degradation caused by AC BTI stress is dependent on the device technology generation unlike the DC BTI stress degradation, which is found to be independent of technology generation. Also, we found that the AC BTI stress causes more permanent damage to the device due to the creation of interface traps and border traps in contrast to DC BTI where only border traps are responsible for the degradation.
AB - In this work we compared AC and DC bias temperature instability (BTI) degradations induced by stressing the channel and Junction-FET regions in 4H polytype n-channel Silicon Carbide (SiC) based power MOSFETs. We observed that the degradation caused by AC BTI stress is dependent on the device technology generation unlike the DC BTI stress degradation, which is found to be independent of technology generation. Also, we found that the AC BTI stress causes more permanent damage to the device due to the creation of interface traps and border traps in contrast to DC BTI where only border traps are responsible for the degradation.
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U2 - 10.1109/IRPS48227.2022.9764494
DO - 10.1109/IRPS48227.2022.9764494
M3 - Conference contribution
AN - SCOPUS:85130745079
T3 - IEEE International Reliability Physics Symposium Proceedings
SP - 7A21-7A26
BT - 2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 IEEE International Reliability Physics Symposium, IRPS 2022
Y2 - 27 March 2022 through 31 March 2022
ER -