Comparison of AC and DC BTI in SiC Power MOSFETs

Amartya K. Ghosh, Osama O. Awadelkarim, Jifa Hao, Samia Suliman, Xinyu Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

In this work we compared AC and DC bias temperature instability (BTI) degradations induced by stressing the channel and Junction-FET regions in 4H polytype n-channel Silicon Carbide (SiC) based power MOSFETs. We observed that the degradation caused by AC BTI stress is dependent on the device technology generation unlike the DC BTI stress degradation, which is found to be independent of technology generation. Also, we found that the AC BTI stress causes more permanent damage to the device due to the creation of interface traps and border traps in contrast to DC BTI where only border traps are responsible for the degradation.

Original languageEnglish (US)
Title of host publication2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages7A21-7A26
ISBN (Electronic)9781665479509
DOIs
StatePublished - 2022
Event2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Dallas, United States
Duration: Mar 27 2022Mar 31 2022

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2022-March
ISSN (Print)1541-7026

Conference

Conference2022 IEEE International Reliability Physics Symposium, IRPS 2022
Country/TerritoryUnited States
CityDallas
Period3/27/223/31/22

All Science Journal Classification (ASJC) codes

  • General Engineering

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