Skip to main navigation Skip to search Skip to main content

Comparison of composition and atomic structure of amorphous indium gallium zinc oxide thin film transistor before and after positive bias temperature stress by transmission electron microscopy

Research output: Contribution to journal › Article › peer-review

4   Link opens in a new tab Scopus citations

Fingerprint

Dive into the research topics of 'Comparison of composition and atomic structure of amorphous indium gallium zinc oxide thin film transistor before and after positive bias temperature stress by transmission electron microscopy'. Together they form a unique fingerprint.
Sort by

Keyphrases

Material Science