TY - JOUR
T1 - Comparison of discrete-storage nonvolatile memories
T2 - Advantage of hybrid method for fabrication of Au nanocrystal nonvolatile memory
AU - Wang, Qin
AU - Jia, Rui
AU - Guan, Weihua
AU - Li, Weilong
AU - Liu, Qi
AU - Hu, Yuan
AU - Long, Shibing
AU - Chen, Baoqin
AU - Liu, Ming
AU - Ye, Tianchun
AU - Lu, Wensheng
AU - Jiang, Long
PY - 2008/2/7
Y1 - 2008/2/7
N2 - In this paper, the memory characteristics of two kinds of metal-oxide-semiconductor (MOS) capacitors embedded with Au nanocrytals are investigated: hybrid MOS with nanocrystals (NCs) fabricated by chemical syntheses and rapid thermal annealing (RTA) MOS with NCs fabricated by RTA. For both kinds of devices, the capacitance versus voltage (C-V) curves clearly indicate the charge storage in the NCs. The hybrid MOS, however, shows a larger memory window, as compared with RTA MOS. The retention characteristics of the two MOS devices are also investigated. The capacitance versus time (C-t) measurement shows that the hybrid MOS capacitor embedded with Au nanocrystals has a longer retention time. The mechanism of longer retention time for hybrid MOS capacitor is qualitatively discussed.
AB - In this paper, the memory characteristics of two kinds of metal-oxide-semiconductor (MOS) capacitors embedded with Au nanocrytals are investigated: hybrid MOS with nanocrystals (NCs) fabricated by chemical syntheses and rapid thermal annealing (RTA) MOS with NCs fabricated by RTA. For both kinds of devices, the capacitance versus voltage (C-V) curves clearly indicate the charge storage in the NCs. The hybrid MOS, however, shows a larger memory window, as compared with RTA MOS. The retention characteristics of the two MOS devices are also investigated. The capacitance versus time (C-t) measurement shows that the hybrid MOS capacitor embedded with Au nanocrystals has a longer retention time. The mechanism of longer retention time for hybrid MOS capacitor is qualitatively discussed.
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U2 - 10.1088/0022-3727/41/3/035109
DO - 10.1088/0022-3727/41/3/035109
M3 - Article
AN - SCOPUS:43049133276
SN - 0022-3727
VL - 41
JO - Journal of Physics D: Applied Physics
JF - Journal of Physics D: Applied Physics
IS - 3
M1 - 035109
ER -