TY - GEN
T1 - Comparison of etching tools for resist pattern transfer
AU - Horn, Mark W.
AU - Hartney, Mark A.
AU - Kunz, Roderick R.
PY - 1992
Y1 - 1992
N2 - Several etching tools were evaluated for the oxygen-based plasma pattern transfer step in surface imaging and multilayer resist processes. These tools include a conventional parallel-plate reactive ion etcher, a magnetically enhanced reactive ion etcher, an electron cyclotron resonance reactor, and a Helicon (rf helical resonator) reactor. The performance of each tool was examined with respect to etch rate, etch profile, selectivity between the imaging layer and the pattern transfer layer, etch uniformity, etching residue, linewidth uniformity, and process latitude.
AB - Several etching tools were evaluated for the oxygen-based plasma pattern transfer step in surface imaging and multilayer resist processes. These tools include a conventional parallel-plate reactive ion etcher, a magnetically enhanced reactive ion etcher, an electron cyclotron resonance reactor, and a Helicon (rf helical resonator) reactor. The performance of each tool was examined with respect to etch rate, etch profile, selectivity between the imaging layer and the pattern transfer layer, etch uniformity, etching residue, linewidth uniformity, and process latitude.
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U2 - 10.1117/12.59764
DO - 10.1117/12.59764
M3 - Conference contribution
AN - SCOPUS:0026491244
SN - 0819408271
SN - 9780819408273
T3 - Proceedings of SPIE - The International Society for Optical Engineering
SP - 448
EP - 460
BT - Proceedings of SPIE - The International Society for Optical Engineering
PB - Publ by Int Soc for Optical Engineering
T2 - Advances in Resist Technology and Processing IX
Y2 - 9 March 1992 through 10 March 1992
ER -