Abstract
The effects of ionizing radiation and high field stressing on metal-oxide-silicon oxides are compared. Using electron spin resonance, the authors compare the point defects responsible for the positive charge generated by ionizing radiation and high field stressing. The two processes have been found to be different in that the positive charge generated by ionizing radiation is almost entirely due to E' centers in the oxide; however, less than half the positive charge generated by high field stressing can be accounted for by E' centers.
| Original language | English (US) |
|---|---|
| Journal | IEEE Transactions on Nuclear Science |
| Volume | NS-34 |
| Issue number | 6 |
| State | Published - Dec 1987 |
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering