TY - JOUR
T1 - Comparison of the MOCVD growth and properties of wafer-scale transition metal dichalcogenide epitaxial monolayers
AU - Choudhury, Tanushree H.
AU - Trainor, Nicholas
AU - Chen, Chen
AU - Chubarov, Mikhail
AU - Bachu, Saiphaneendra
AU - Momeni, Kasra
AU - Lundh, James Spencer
AU - Hickey, Danielle Reifsnyder
AU - Zhang, Tianyi
AU - Sebastian, Amritanand
AU - Zhu, Haoyue
AU - Song, Baokun
AU - Chen, Yueli
AU - Huet, Benjamin
AU - Bansal, Anushka
AU - Choi, Sukwon
AU - Alem, Nasim
AU - Terrones, Mauricio
AU - Jariwala, Deep
AU - Das, Saptarshi
AU - Redwing, Joan M.
N1 - Publisher Copyright:
© 2025 The Author(s). Published by IOP Publishing Ltd.
PY - 2025/10/1
Y1 - 2025/10/1
N2 - Epitaxial growth of transition metal dichalcogenides (TMDs) by metalorganic chemical vapor deposition is a promising method for wafer-scale synthesis of monolayer films. This study focuses on a comparison of the epitaxial growth of MoS2, WS2, and WSe2 monolayers on 2 inch c-plane sapphire substrates using a cold-wall reactor with metal hexacarbonyl and hydride chalcogen sources. Uniform thermofluidic conditions enabled a comparative analysis of nucleation density, domain size, and lateral growth rate across TMD compounds, shedding light on the impact of TMD chemistry on epitaxial growth. Despite the use of chemically analogous precursors such as Mo(CO)6 or W(CO)6 and H2S or H2Se, significant differences in growth behavior are observed. Comprehensive structural, optical, and transport characterizations provide insights into sulfur versus selenium-based TMDs, advancing the understanding of optimized growth conditions for these emerging materials.
AB - Epitaxial growth of transition metal dichalcogenides (TMDs) by metalorganic chemical vapor deposition is a promising method for wafer-scale synthesis of monolayer films. This study focuses on a comparison of the epitaxial growth of MoS2, WS2, and WSe2 monolayers on 2 inch c-plane sapphire substrates using a cold-wall reactor with metal hexacarbonyl and hydride chalcogen sources. Uniform thermofluidic conditions enabled a comparative analysis of nucleation density, domain size, and lateral growth rate across TMD compounds, shedding light on the impact of TMD chemistry on epitaxial growth. Despite the use of chemically analogous precursors such as Mo(CO)6 or W(CO)6 and H2S or H2Se, significant differences in growth behavior are observed. Comprehensive structural, optical, and transport characterizations provide insights into sulfur versus selenium-based TMDs, advancing the understanding of optimized growth conditions for these emerging materials.
UR - https://www.scopus.com/pages/publications/105013163091
UR - https://www.scopus.com/inward/citedby.url?scp=105013163091&partnerID=8YFLogxK
U2 - 10.1088/2053-1583/adf567
DO - 10.1088/2053-1583/adf567
M3 - Article
AN - SCOPUS:105013163091
SN - 2053-1583
VL - 12
JO - 2D Materials
JF - 2D Materials
IS - 4
M1 - 045009
ER -