@inproceedings{9c38f205f07f47f7ae4f5ef7d16d07ca,
title = "Composite ohmic contacts to SiC",
abstract = "Composite ohmic contacts designed for SiC devices operating in air at 350°C have been studied. Ohmic contacts to n- and p-4H-SiC were protected against inter-diffusion and oxidation by Ta-Si-N layers obtained by sputter deposition from a TaSi2 target in a mixture of Ar and N2. Platinum was sputter-deposited at 250°C to promote adhesion between the Ta-SiN barrier layer and a thick Au cap layer. Platinum also acts as a barrier to the diffusion of Au. The electrical and mechanical characteristics of the composite contacts were stable after hundreds of hours of annealing in air at 350°C. We report the effects of thermal aging on the specific contact resistance and the semiconductor sheet resistance, and the results of wire bond pull and shear tests following aging for Ta-Si-N / Pt / Au stacks deposited on both SiO2 dielectric layers and the ohmic contact layers.",
author = "Adedeji, \{A. V.\} and Ahyi, \{A. C.\} and Williams, \{J. R.\} and Bozack, \{M. J.\} and Mohney, \{S. E.\} and B. Liu and Scofield, \{J. D.\}",
year = "2006",
doi = "10.4028/0-87849-425-1.879",
language = "English (US)",
isbn = "9780878494255",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
number = "PART 2",
pages = "879--882",
booktitle = "Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005",
edition = "PART 2",
note = "International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) ; Conference date: 18-09-2005 Through 23-09-2005",
}