TY - JOUR
T1 - Composition and phase dependence of the intrinsic and extrinsic piezoelectric activity of domain engineered (1-x)Pb(Mg1/3Nb 2/3)O3-xPbTiO3 crystals
AU - Li, Fei
AU - Zhang, Shujun
AU - Xu, Zhuo
AU - Wei, Xiaoyong
AU - Luo, Jun
AU - Shrout, Thomas R.
N1 - Funding Information:
The author (F. Li) wants to thank the support from China Scholarship Council. The authors from Xi’an Jiaotong University acknowledged the National basic research program of China under Grant No. 2009CB623306, International science & technology cooperation program of China under Grant No. 2010DFR50480, the National Natural Science Foundation of China under Grant Nos. 50632030 and 10976022. The work supported by NIH under Grant No. P41-EB21820 and ONR under Grant Nos. N00014-09-1-01456 and N-00014-07-C-0858.
PY - 2010/8/1
Y1 - 2010/8/1
N2 - The piezoelectric response of [001] poled domain engineered (1-x)Pb(Mg 1/3Nb2/3)O3-xPbTiO3 (PMN-PT) crystals was investigated as a function of composition and phase using Rayleigh analysis. The results revealed that the intrinsic (reversible) contribution plays a dominant role in the high piezoelectric activity for PMN-PT crystals. The intrinsic piezoelectric response of the monoclinic (MC) PMN-xPT crystals, 0.31≤x≤0.35, exhibited peak values for compositions close to R-MC and MC-T phase boundaries, however, being less than 2000 pC/N. In the rhombohedral phase region, x≤0.30, the intrinsic piezoelectric response was found to increase as the composition approached the rhombohedral-monoclinic (R-MC) phase boundary. The maximum piezoelectric response was observed in rhombohedral PMN-0.30PT crystals, being on the order of 2500 pC/N. This ultrahigh piezoelectric response was determined to be related to the high shear piezoelectric activity of single domain state, corresponding to an ease in polarization rotation, for compositions close to a morphotropic phase boundary (MPB). The role of monoclinic phase is only to form a MPB with R phase, but not directly contribute to the ultrahigh piezoelectric activity in rhombohedral PMN-0.30PT crystals. The extrinsic contribution to piezoelectric activity was found to be less than 5% for the compositions away from R-MC and MC-T phase boundaries, due to a stable domain engineered structure. As the composition approached MPBs, the extrinsic contribution increased slightly (<10%), due to the enhanced motion of phase boundaries.
AB - The piezoelectric response of [001] poled domain engineered (1-x)Pb(Mg 1/3Nb2/3)O3-xPbTiO3 (PMN-PT) crystals was investigated as a function of composition and phase using Rayleigh analysis. The results revealed that the intrinsic (reversible) contribution plays a dominant role in the high piezoelectric activity for PMN-PT crystals. The intrinsic piezoelectric response of the monoclinic (MC) PMN-xPT crystals, 0.31≤x≤0.35, exhibited peak values for compositions close to R-MC and MC-T phase boundaries, however, being less than 2000 pC/N. In the rhombohedral phase region, x≤0.30, the intrinsic piezoelectric response was found to increase as the composition approached the rhombohedral-monoclinic (R-MC) phase boundary. The maximum piezoelectric response was observed in rhombohedral PMN-0.30PT crystals, being on the order of 2500 pC/N. This ultrahigh piezoelectric response was determined to be related to the high shear piezoelectric activity of single domain state, corresponding to an ease in polarization rotation, for compositions close to a morphotropic phase boundary (MPB). The role of monoclinic phase is only to form a MPB with R phase, but not directly contribute to the ultrahigh piezoelectric activity in rhombohedral PMN-0.30PT crystals. The extrinsic contribution to piezoelectric activity was found to be less than 5% for the compositions away from R-MC and MC-T phase boundaries, due to a stable domain engineered structure. As the composition approached MPBs, the extrinsic contribution increased slightly (<10%), due to the enhanced motion of phase boundaries.
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U2 - 10.1063/1.3466978
DO - 10.1063/1.3466978
M3 - Article
AN - SCOPUS:77955899737
SN - 0021-8979
VL - 108
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 3
M1 - 034106
ER -