Compositional shift in Al xGa 1-xN beneath annealed metal contacts

B. A. Hull; S. E. Mohney; U. Chowdhury; R. D. Dupuis

Compositional shift in Al _xGa _1-xN beneath annealed metal contacts

B. A. Hull, S. E. Mohney, U. Chowdhury, R. D. Dupuis

Research output: Contribution to journal › Article › peer-review

Abstract

The interfacial reactions between Ni, Pd, or Au thin films and Al _xGa _1-x epitaxial layer with composition x=0.15 and 0.47 were investigated. The compositional shift of the sample induced by the reactions beneath the film to a Al-rich composition was studied using X-ray photoelectron spectroscopy and scanning transmission electron microscopy. The influence of the compositional shift in Al _xGa _1-x stoichiometry on the electrical properties of annealed ohmic contacts and Schottky contacts to n-type and p-type of the sample were also discussed. The diffusion of Ga into the Ni film was found after annealing of Ni/Al _0.47Ga _0.53 for 60 min at 850°C.

Original language	English (US)
Pages (from-to)	654-662
Number of pages	9
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	22
Issue number	2
State	Published - Mar 1 2004

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

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abstract = "The interfacial reactions between Ni, Pd, or Au thin films and Al xGa 1-x epitaxial layer with composition x=0.15 and 0.47 were investigated. The compositional shift of the sample induced by the reactions beneath the film to a Al-rich composition was studied using X-ray photoelectron spectroscopy and scanning transmission electron microscopy. The influence of the compositional shift in Al xGa 1-x stoichiometry on the electrical properties of annealed ohmic contacts and Schottky contacts to n-type and p-type of the sample were also discussed. The diffusion of Ga into the Ni film was found after annealing of Ni/Al 0.47Ga 0.53 for 60 min at 850°C.",

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AU - Mohney, S. E.

AU - Chowdhury, U.

AU - Dupuis, R. D.

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N2 - The interfacial reactions between Ni, Pd, or Au thin films and Al xGa 1-x epitaxial layer with composition x=0.15 and 0.47 were investigated. The compositional shift of the sample induced by the reactions beneath the film to a Al-rich composition was studied using X-ray photoelectron spectroscopy and scanning transmission electron microscopy. The influence of the compositional shift in Al xGa 1-x stoichiometry on the electrical properties of annealed ohmic contacts and Schottky contacts to n-type and p-type of the sample were also discussed. The diffusion of Ga into the Ni film was found after annealing of Ni/Al 0.47Ga 0.53 for 60 min at 850°C.

AB - The interfacial reactions between Ni, Pd, or Au thin films and Al xGa 1-x epitaxial layer with composition x=0.15 and 0.47 were investigated. The compositional shift of the sample induced by the reactions beneath the film to a Al-rich composition was studied using X-ray photoelectron spectroscopy and scanning transmission electron microscopy. The influence of the compositional shift in Al xGa 1-x stoichiometry on the electrical properties of annealed ohmic contacts and Schottky contacts to n-type and p-type of the sample were also discussed. The diffusion of Ga into the Ni film was found after annealing of Ni/Al 0.47Ga 0.53 for 60 min at 850°C.

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Compositional shift in Al _xGa _1-xN beneath annealed metal contacts

Abstract

All Science Journal Classification (ASJC) codes

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