Compositionally Dependent Si 2p Binding Energy Shifts in Silicon Oxynitride Thin Films

RICHARD K. BROW; CARLO G. PANTANO

doi:10.1111/j.1151-2916.1986.tb04738.x

Compositionally Dependent Si 2p Binding Energy Shifts in Silicon Oxynitride Thin Films

RICHARD K. BROW, CARLO G. PANTANO

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Abstract

The Si 2p binding energies measured from a series of silicon oxynitride thin films are related to the nitrogen contents of the films using a simple Pauling charge distribution model. The linear relation found between the binding energy and the calculated charge is expected if Si–N bonds replace Si–O bonds as the nitrogen content of the films is increased.

Original language	English (US)
Pages (from-to)	314-316
Number of pages	3
Journal	Journal of the American Ceramic Society
Volume	69
Issue number	4
DOIs	https://doi.org/10.1111/j.1151-2916.1986.tb04738.x
State	Published - Apr 1986

All Science Journal Classification (ASJC) codes

Ceramics and Composites
Materials Chemistry

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10.1111/j.1151-2916.1986.tb04738.x

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title = "Compositionally Dependent Si 2p Binding Energy Shifts in Silicon Oxynitride Thin Films",

abstract = "The Si 2p binding energies measured from a series of silicon oxynitride thin films are related to the nitrogen contents of the films using a simple Pauling charge distribution model. The linear relation found between the binding energy and the calculated charge is expected if Si–N bonds replace Si–O bonds as the nitrogen content of the films is increased.",

author = "BROW, {RICHARD K.} and PANTANO, {CARLO G.}",

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N2 - The Si 2p binding energies measured from a series of silicon oxynitride thin films are related to the nitrogen contents of the films using a simple Pauling charge distribution model. The linear relation found between the binding energy and the calculated charge is expected if Si–N bonds replace Si–O bonds as the nitrogen content of the films is increased.

AB - The Si 2p binding energies measured from a series of silicon oxynitride thin films are related to the nitrogen contents of the films using a simple Pauling charge distribution model. The linear relation found between the binding energy and the calculated charge is expected if Si–N bonds replace Si–O bonds as the nitrogen content of the films is increased.

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Compositionally Dependent Si 2p Binding Energy Shifts in Silicon Oxynitride Thin Films

Abstract

All Science Journal Classification (ASJC) codes

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