Conducting mis diode gas detectors: the Pd/SiOx/Si hydrogen sensor

S. J. Fonash; H. Huston; S. Ashok

doi:10.1016/0250-6874(81)80056-X

Conducting mis diode gas detectors: the Pd/SiO_x/Si hydrogen sensor

S. J. Fonash, H. Huston, S. Ashok

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

A survey of barrier formation and transport in MS and conducting MIS structures is presented and used to describe the hydrogen sensitivity of Pd/SiO_x/Si structures. The presence of the interfacial oxide is shown to be necessary for the palladium diode to be sensitive to hydrogen. The sensitivity of highly responsive devices is shown to be due to Schottky barrier modification in the presence of hydrogen and not to an additional channel of transport caused by an increased interface state density in the presence of hydrogen.

Original language	English (US)
Pages (from-to)	363-369
Number of pages	7
Journal	Sensors and Actuators
Volume	2
Issue number	C
DOIs	https://doi.org/10.1016/0250-6874(81)80056-X
State	Published - 1981

All Science Journal Classification (ASJC) codes

General Engineering

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10.1016/0250-6874(81)80056-X

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title = "Conducting mis diode gas detectors: the Pd/SiOx/Si hydrogen sensor",

abstract = "A survey of barrier formation and transport in MS and conducting MIS structures is presented and used to describe the hydrogen sensitivity of Pd/SiOx/Si structures. The presence of the interfacial oxide is shown to be necessary for the palladium diode to be sensitive to hydrogen. The sensitivity of highly responsive devices is shown to be due to Schottky barrier modification in the presence of hydrogen and not to an additional channel of transport caused by an increased interface state density in the presence of hydrogen.",

author = "Fonash, {S. J.} and H. Huston and S. Ashok",

year = "1981",

doi = "10.1016/0250-6874(81)80056-X",

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T2 - the Pd/SiOx/Si hydrogen sensor

AU - Fonash, S. J.

AU - Huston, H.

AU - Ashok, S.

PY - 1981

Y1 - 1981

N2 - A survey of barrier formation and transport in MS and conducting MIS structures is presented and used to describe the hydrogen sensitivity of Pd/SiOx/Si structures. The presence of the interfacial oxide is shown to be necessary for the palladium diode to be sensitive to hydrogen. The sensitivity of highly responsive devices is shown to be due to Schottky barrier modification in the presence of hydrogen and not to an additional channel of transport caused by an increased interface state density in the presence of hydrogen.

AB - A survey of barrier formation and transport in MS and conducting MIS structures is presented and used to describe the hydrogen sensitivity of Pd/SiOx/Si structures. The presence of the interfacial oxide is shown to be necessary for the palladium diode to be sensitive to hydrogen. The sensitivity of highly responsive devices is shown to be due to Schottky barrier modification in the presence of hydrogen and not to an additional channel of transport caused by an increased interface state density in the presence of hydrogen.

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U2 - 10.1016/0250-6874(81)80056-X

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JO - Sensors and Actuators

JF - Sensors and Actuators

IS - C

ER -

Conducting mis diode gas detectors: the Pd/SiO_x/Si hydrogen sensor

Abstract

All Science Journal Classification (ASJC) codes

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