Conduction and threshold switching in small area lateral metal-polymer-metal devices

A. Sa Neto; M. Octavio; R. C. Callarotti; P. E. Schmidt; P. Esqueda

doi:10.1063/1.328123

Conduction and threshold switching in small area lateral metal-polymer-metal devices

A. Sa Neto
, M. Octavio
, R. C. Callarotti
, P. E. Schmidt
, P. Esqueda

Penn State Berks

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We report on measurements of conduction and threshold switching in organic polymer films using a new lateral geometry with very small (∼4 μm ²) metallic contact areas. This geometry is shown to be quite useful in the study of both the conduction and switching mechanisms in thick (1-2 μm) polymethylmethacrylate (PMMA) films and should be equally useful in the study of switching mechanisms in other organic, semiconducting, or insulating materials. Results are presented showing reproducible and consistent "zero-voltage" resistance values. Evidence is presented which suggests that filament formation occurred during threshold switching in our polymethylmethacrylate films.

Original language	English (US)
Pages (from-to)	3827-3829
Number of pages	3
Journal	Journal of Applied Physics
Volume	51
Issue number	7
DOIs	https://doi.org/10.1063/1.328123
State	Published - 1980

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.328123

Cite this

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title = "Conduction and threshold switching in small area lateral metal-polymer-metal devices",

abstract = "We report on measurements of conduction and threshold switching in organic polymer films using a new lateral geometry with very small (∼4 μm 2) metallic contact areas. This geometry is shown to be quite useful in the study of both the conduction and switching mechanisms in thick (1-2 μm) polymethylmethacrylate (PMMA) films and should be equally useful in the study of switching mechanisms in other organic, semiconducting, or insulating materials. Results are presented showing reproducible and consistent {"}zero-voltage{"} resistance values. Evidence is presented which suggests that filament formation occurred during threshold switching in our polymethylmethacrylate films.",

author = "\{Sa Neto\}, A. and M. Octavio and Callarotti, \{R. C.\} and Schmidt, \{P. E.\} and P. Esqueda",

year = "1980",

doi = "10.1063/1.328123",

language = "English (US)",

volume = "51",

pages = "3827--3829",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "7",

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TY - JOUR

T1 - Conduction and threshold switching in small area lateral metal-polymer-metal devices

AU - Sa Neto, A.

AU - Octavio, M.

AU - Callarotti, R. C.

AU - Schmidt, P. E.

AU - Esqueda, P.

PY - 1980

Y1 - 1980

N2 - We report on measurements of conduction and threshold switching in organic polymer films using a new lateral geometry with very small (∼4 μm 2) metallic contact areas. This geometry is shown to be quite useful in the study of both the conduction and switching mechanisms in thick (1-2 μm) polymethylmethacrylate (PMMA) films and should be equally useful in the study of switching mechanisms in other organic, semiconducting, or insulating materials. Results are presented showing reproducible and consistent "zero-voltage" resistance values. Evidence is presented which suggests that filament formation occurred during threshold switching in our polymethylmethacrylate films.

AB - We report on measurements of conduction and threshold switching in organic polymer films using a new lateral geometry with very small (∼4 μm 2) metallic contact areas. This geometry is shown to be quite useful in the study of both the conduction and switching mechanisms in thick (1-2 μm) polymethylmethacrylate (PMMA) films and should be equally useful in the study of switching mechanisms in other organic, semiconducting, or insulating materials. Results are presented showing reproducible and consistent "zero-voltage" resistance values. Evidence is presented which suggests that filament formation occurred during threshold switching in our polymethylmethacrylate films.

UR - https://www.scopus.com/pages/publications/0019037598

UR - https://www.scopus.com/pages/publications/0019037598#tab=citedBy

U2 - 10.1063/1.328123

DO - 10.1063/1.328123

M3 - Article

AN - SCOPUS:0019037598

SN - 0021-8979

VL - 51

SP - 3827

EP - 3829

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

ER -

Conduction and threshold switching in small area lateral metal-polymer-metal devices

Abstract

All Science Journal Classification (ASJC) codes

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