Conductive oxide thin films: Model systems for understanding and controlling surface plasmon resonance

Keyphrases

• Oxide Thin Films 100%
• Electron Mobility 100%
• Surface Plasmon Resonance 100%
• Conductive Oxide 100%
• Electronic Transport Properties 66%
• Plasmonic Response 66%
• Obfuscation 33%
• Nitrides 33%
• Material Properties 33%
• Reflectance Spectra 33%
• Silicide 33%
• Cm(III) 33%
• Dielectric Response 33%
• Low Oxygen Partial Pressure 33%
• Charge Carriers 33%
• Material System 33%
• Band Frequency 33%
• Resonant Response 33%
• Film Microstructure 33%
• Spectral Response 33%
• Deposition Conditions 33%
• Indium Tin Oxide 33%
• High Absorption 33%
• Carrier Concentration 33%
• Absorption Bands 33%
• Sputter-deposited 33%
• Process-structure-property Relationship 33%
• Intersubband Transitions 33%
• Film Deposition 33%
• Dielectric Function 33%
• Advanced Materials 33%
• Carrier Density 33%
• Fresnel Equations 33%
• High Carrier Concentration 33%
• Defect Equilibrium 33%
• Infrared Reflectivity Spectra 33%
• Free Electron Model 33%
• Oxide Defects 33%
• Post-deposition Annealing 33%
• Doped Semiconductor 33%
• Spectrum Use 33%
• Indium Tin Oxide Thin Film 33%

Material Science

• Thin Films 100%
• Oxide Compound 100%
• Carrier Concentration 100%
• Indium Tin Oxide 100%
• Surface Plasmon Resonance 100%
• Reflectivity 66%
• Dielectric Material 66%
• Absorption Spectra 66%
• Film 33%
• Nitride Compound 33%
• Silicide 33%
• Surface Plasmon 33%
• Charge Carrier 33%
• Advanced Material 33%
• Film Deposition 33%
• Materials Property 33%