Configuration-dependent enhancements of electric fields near the quadruple and the triple junction

M. S. Chung; B. G. Yoon; P. H. Cutler; N. M. Miskovsky; B. L. Weiss; A. Mayer

doi:10.1116/1.3271161

Configuration-dependent enhancements of electric fields near the quadruple and the triple junction

M. S. Chung, B. G. Yoon, P. H. Cutler, N. M. Miskovsky, B. L. Weiss, A. Mayer

Division of Mathematics & Natural Sciences (Altoona)

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The authors investigated the behavior of an electric field near a junction composed of metal, dielectric, and vacuum. By using the two-dimensional model of the junction, the authors calculated the electric field near the junction as a function of configuration. For the triple junction of metal-vacuum-dielectric, the electric field is found to be enhanced and reduced according to the ratio of the contact angles. The use of the same model also leads to the result that the quadruple junction of metal-vacuum-dielectric-vacuum yields a much larger field enhancement than the triple junction. It is noted that the total enhancement of the electric field at the junction is the product of the two enhancements due to the dielectric and the shape of the metallic emission site.

Original language	English (US)
Pages (from-to)	C2A94-C2A97
Journal	Journal of Vacuum Science and Technology B
Volume	28
Issue number	2
DOIs	https://doi.org/10.1116/1.3271161
State	Published - 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1116/1.3271161

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@article{ec257c49ad6d475d9fb18fba8148bed5,

title = "Configuration-dependent enhancements of electric fields near the quadruple and the triple junction",

abstract = "The authors investigated the behavior of an electric field near a junction composed of metal, dielectric, and vacuum. By using the two-dimensional model of the junction, the authors calculated the electric field near the junction as a function of configuration. For the triple junction of metal-vacuum-dielectric, the electric field is found to be enhanced and reduced according to the ratio of the contact angles. The use of the same model also leads to the result that the quadruple junction of metal-vacuum-dielectric-vacuum yields a much larger field enhancement than the triple junction. It is noted that the total enhancement of the electric field at the junction is the product of the two enhancements due to the dielectric and the shape of the metallic emission site.",

author = "Chung, {M. S.} and Yoon, {B. G.} and Cutler, {P. H.} and Miskovsky, {N. M.} and Weiss, {B. L.} and A. Mayer",

note = "Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea Government (MEST) (No. R01-2008-000-20025-0).",

year = "2010",

doi = "10.1116/1.3271161",

language = "English (US)",

volume = "28",

pages = "C2A94--C2A97",

journal = "Journal of Vacuum Science and Technology B",

issn = "2166-2746",

publisher = "AVS Science and Technology Society",

number = "2",

}

TY - JOUR

T1 - Configuration-dependent enhancements of electric fields near the quadruple and the triple junction

AU - Chung, M. S.

AU - Yoon, B. G.

AU - Cutler, P. H.

AU - Miskovsky, N. M.

AU - Weiss, B. L.

AU - Mayer, A.

N1 - Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea Government (MEST) (No. R01-2008-000-20025-0).

PY - 2010

Y1 - 2010

N2 - The authors investigated the behavior of an electric field near a junction composed of metal, dielectric, and vacuum. By using the two-dimensional model of the junction, the authors calculated the electric field near the junction as a function of configuration. For the triple junction of metal-vacuum-dielectric, the electric field is found to be enhanced and reduced according to the ratio of the contact angles. The use of the same model also leads to the result that the quadruple junction of metal-vacuum-dielectric-vacuum yields a much larger field enhancement than the triple junction. It is noted that the total enhancement of the electric field at the junction is the product of the two enhancements due to the dielectric and the shape of the metallic emission site.

AB - The authors investigated the behavior of an electric field near a junction composed of metal, dielectric, and vacuum. By using the two-dimensional model of the junction, the authors calculated the electric field near the junction as a function of configuration. For the triple junction of metal-vacuum-dielectric, the electric field is found to be enhanced and reduced according to the ratio of the contact angles. The use of the same model also leads to the result that the quadruple junction of metal-vacuum-dielectric-vacuum yields a much larger field enhancement than the triple junction. It is noted that the total enhancement of the electric field at the junction is the product of the two enhancements due to the dielectric and the shape of the metallic emission site.

UR - http://www.scopus.com/inward/record.url?scp=77950557555&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77950557555&partnerID=8YFLogxK

U2 - 10.1116/1.3271161

DO - 10.1116/1.3271161

M3 - Article

AN - SCOPUS:77950557555

SN - 2166-2746

VL - 28

SP - C2A94-C2A97

JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

IS - 2

ER -

Configuration-dependent enhancements of electric fields near the quadruple and the triple junction

Abstract

All Science Journal Classification (ASJC) codes

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