Confinement in silicon nanowires: Optical properties

S. Bhattacharya; D. Banerjee; K. W. Adu; S. Samui; Somnath Bhattacharyya

doi:10.1063/1.1787164

Confinement in silicon nanowires: Optical properties

S. Bhattacharya, D. Banerjee, K. W. Adu, S. Samui, Somnath Bhattacharyya

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Abstract

The blueshift of the optical absorption edge along with the intense red photoluminescence (PL) peak from micron-long crystalline silicon nanowires (SiNW) prepared by pulsed-laser vaporization of heated Si targets were analyzed. A Perkin-Elmer Lambda 40 spectrophotometer was used to perform optical absorption of the SiNWs samples deposited on a fused quartz plate. It was observed that from the fit of optical absorption there is an upshift of band edge and the shift is different for indirect and direct bands of SiNWs. It was found that the shape of the band and PL peak strongly depends on the diameter distribution.

Original language	English (US)
Pages (from-to)	2008-2010
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	11
DOIs	https://doi.org/10.1063/1.1787164
State	Published - Sep 13 2004

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1787164

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title = "Confinement in silicon nanowires: Optical properties",

abstract = "The blueshift of the optical absorption edge along with the intense red photoluminescence (PL) peak from micron-long crystalline silicon nanowires (SiNW) prepared by pulsed-laser vaporization of heated Si targets were analyzed. A Perkin-Elmer Lambda 40 spectrophotometer was used to perform optical absorption of the SiNWs samples deposited on a fused quartz plate. It was observed that from the fit of optical absorption there is an upshift of band edge and the shift is different for indirect and direct bands of SiNWs. It was found that the shape of the band and PL peak strongly depends on the diameter distribution.",

author = "S. Bhattacharya and D. Banerjee and Adu, {K. W.} and S. Samui and Somnath Bhattacharyya",

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T2 - Optical properties

AU - Bhattacharya, S.

AU - Banerjee, D.

AU - Adu, K. W.

AU - Samui, S.

AU - Bhattacharyya, Somnath

PY - 2004/9/13

Y1 - 2004/9/13

N2 - The blueshift of the optical absorption edge along with the intense red photoluminescence (PL) peak from micron-long crystalline silicon nanowires (SiNW) prepared by pulsed-laser vaporization of heated Si targets were analyzed. A Perkin-Elmer Lambda 40 spectrophotometer was used to perform optical absorption of the SiNWs samples deposited on a fused quartz plate. It was observed that from the fit of optical absorption there is an upshift of band edge and the shift is different for indirect and direct bands of SiNWs. It was found that the shape of the band and PL peak strongly depends on the diameter distribution.

AB - The blueshift of the optical absorption edge along with the intense red photoluminescence (PL) peak from micron-long crystalline silicon nanowires (SiNW) prepared by pulsed-laser vaporization of heated Si targets were analyzed. A Perkin-Elmer Lambda 40 spectrophotometer was used to perform optical absorption of the SiNWs samples deposited on a fused quartz plate. It was observed that from the fit of optical absorption there is an upshift of band edge and the shift is different for indirect and direct bands of SiNWs. It was found that the shape of the band and PL peak strongly depends on the diameter distribution.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Confinement in silicon nanowires: Optical properties

Abstract

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