Confocal photoluminescence and cathodoluminescence studies of AlGaN

V. Dierolf; O. Svitelskiy; G. S. Cargill; A. Yu Nikiforov; J. Redwing; J. Acord

doi:10.1557/proc-798-y5.64.

Confocal photoluminescence and cathodoluminescence studies of AlGaN

V. Dierolf
, O. Svitelskiy
, G. S. Cargill
, A. Yu Nikiforov
, J. Redwing
, J. Acord

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Al_xGa_1-xN films grown by MOCVD on sapphire and SiC substrates have been investigated by spatially resolved confocal photoluminescence microscopy and cathodoluminescence spectroscopy and mapping. The sample on SiC has a rougher topography, but it is much more uniform in emission intensity and wavelength than the sample on sapphire.

Original language	English (US)
Pages (from-to)	677-682
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	798
DOIs	https://doi.org/10.1557/proc-798-y5.64.
State	Published - Jan 1 2003
Event	GaN and Related Alloys - 2003 - Boston, MA, United States Duration: Dec 1 2003 → Dec 5 2003

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-798-y5.64.

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title = "Confocal photoluminescence and cathodoluminescence studies of AlGaN",

abstract = "AlxGa1-xN films grown by MOCVD on sapphire and SiC substrates have been investigated by spatially resolved confocal photoluminescence microscopy and cathodoluminescence spectroscopy and mapping. The sample on SiC has a rougher topography, but it is much more uniform in emission intensity and wavelength than the sample on sapphire.",

author = "V. Dierolf and O. Svitelskiy and Cargill, \{G. S.\} and Nikiforov, \{A. Yu\} and J. Redwing and J. Acord",

year = "2003",

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doi = "10.1557/proc-798-y5.64.",

language = "English (US)",

volume = "798",

pages = "677--682",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

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note = "GaN and Related Alloys - 2003 ; Conference date: 01-12-2003 Through 05-12-2003",

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TY - JOUR

T1 - Confocal photoluminescence and cathodoluminescence studies of AlGaN

AU - Dierolf, V.

AU - Svitelskiy, O.

AU - Cargill, G. S.

AU - Nikiforov, A. Yu

AU - Redwing, J.

AU - Acord, J.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - AlxGa1-xN films grown by MOCVD on sapphire and SiC substrates have been investigated by spatially resolved confocal photoluminescence microscopy and cathodoluminescence spectroscopy and mapping. The sample on SiC has a rougher topography, but it is much more uniform in emission intensity and wavelength than the sample on sapphire.

AB - AlxGa1-xN films grown by MOCVD on sapphire and SiC substrates have been investigated by spatially resolved confocal photoluminescence microscopy and cathodoluminescence spectroscopy and mapping. The sample on SiC has a rougher topography, but it is much more uniform in emission intensity and wavelength than the sample on sapphire.

UR - https://www.scopus.com/pages/publications/2942652893

UR - https://www.scopus.com/pages/publications/2942652893#tab=citedBy

U2 - 10.1557/proc-798-y5.64.

DO - 10.1557/proc-798-y5.64.

M3 - Conference article

AN - SCOPUS:2942652893

SN - 0272-9172

VL - 798

SP - 677

EP - 682

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - GaN and Related Alloys - 2003

Y2 - 1 December 2003 through 5 December 2003

ER -

Confocal photoluminescence and cathodoluminescence studies of AlGaN

Abstract

All Science Journal Classification (ASJC) codes

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