Consideration of MOS capacitance effect in TSV modeling based on cylindrical modal basis functions

Ki Jin Han; Madhavan Swaminathan

doi:10.1109/EDAPS.2012.6469430

Consideration of MOS capacitance effect in TSV modeling based on cylindrical modal basis functions

Ki Jin Han, Madhavan Swaminathan

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Scopus citations

Abstract

TSV modeling method based on cylindrical modal basis functions is modified to consider the effect of depletion region formed by a DC bias voltage. Extended capacitance matrix equation is obtained to include depletion capacitances, and the new formula is inserted to the original formulation. The proposed method is tested for two TSVs with varying depletion depths, and the computed insertion losses, capacitance, and conductance show reasonable trends.

Original language	English (US)
Title of host publication	2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012
Pages	41-44
Number of pages	4
DOIs	https://doi.org/10.1109/EDAPS.2012.6469430
State	Published - 2012
Event	2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012 - Taipei, Taiwan, Province of China Duration: Dec 9 2012 → Dec 11 2012

Publication series

Name	2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012

Conference

Conference	2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012
Country/Territory	Taiwan, Province of China
City	Taipei
Period	12/9/12 → 12/11/12

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/EDAPS.2012.6469430

Cite this

Han, K. J., & Swaminathan, M. (2012). Consideration of MOS capacitance effect in TSV modeling based on cylindrical modal basis functions. In 2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012 (pp. 41-44). Article 6469430 (2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012). https://doi.org/10.1109/EDAPS.2012.6469430

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title = "Consideration of MOS capacitance effect in TSV modeling based on cylindrical modal basis functions",

abstract = "TSV modeling method based on cylindrical modal basis functions is modified to consider the effect of depletion region formed by a DC bias voltage. Extended capacitance matrix equation is obtained to include depletion capacitances, and the new formula is inserted to the original formulation. The proposed method is tested for two TSVs with varying depletion depths, and the computed insertion losses, capacitance, and conductance show reasonable trends.",

author = "Han, {Ki Jin} and Madhavan Swaminathan",

year = "2012",

doi = "10.1109/EDAPS.2012.6469430",

language = "English (US)",

isbn = "9781467314435",

series = "2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012",

pages = "41--44",

booktitle = "2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012",

note = "2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012 ; Conference date: 09-12-2012 Through 11-12-2012",

}

Han, KJ & Swaminathan, M 2012, Consideration of MOS capacitance effect in TSV modeling based on cylindrical modal basis functions. in 2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012., 6469430, 2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012, pp. 41-44, 2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012, Taipei, Taiwan, Province of China, 12/9/12. https://doi.org/10.1109/EDAPS.2012.6469430

Consideration of MOS capacitance effect in TSV modeling based on cylindrical modal basis functions. / Han, Ki Jin; Swaminathan, Madhavan.
2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012. 2012. p. 41-44 6469430 (2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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Consideration of MOS capacitance effect in TSV modeling based on cylindrical modal basis functions

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