Contact resistance in organic thin film transistors

H. Klauk; G. Schmid; Lisong Zhou; Chris D. Sheraw; Jiunn Ru Huang; Jonathan A. Nichols; Thomas N. Jackson

doi:10.1109/ISDRS.2001.984513

Contact resistance in organic thin film transistors

H. Klauk, G. Schmid, Lisong Zhou, Chris D. Sheraw, Jiunn Ru Huang, Jonathan A. Nichols, Thomas N. Jackson

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

We present an analysis of the electrical characteristics of pentacene OTFTs fabricated on flexible polyethylene naphthalate (PEN) film. Nickel, silicon dioxide, and palladium were deposited by ion-beam sputtering and patterned by photolithography and lift-off to form the gate electrodes, the gate dielectric layer, and the source and drain contacts, respectively. An octadecyltrichlorosilane vapor prime was used to prepare the SiO₂ gate dielectric surface for the deposition of the pentacene layer, which was deposited by thermal evaporation and patterned using a water-soluble, photo-patterned polyvinyl alcohol layer.

Original language	English (US)
Title of host publication	2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	349-352
Number of pages	4
ISBN (Electronic)	0780374320, 9780780374324
DOIs	https://doi.org/10.1109/ISDRS.2001.984513
State	Published - 2001
Event	International Semiconductor Device Research Symposium, ISDRS 2001 - Washington, United States Duration: Dec 5 2001 → Dec 7 2001

Publication series

Name	2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings

Other

Other	International Semiconductor Device Research Symposium, ISDRS 2001
Country/Territory	United States
City	Washington
Period	12/5/01 → 12/7/01

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISDRS.2001.984513

Cite this

Klauk, H., Schmid, G., Zhou, L., Sheraw, C. D., Huang, J. R., Nichols, J. A., & Jackson, T. N. (2001). Contact resistance in organic thin film transistors. In 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings (pp. 349-352). Article 984513 (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISDRS.2001.984513

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title = "Contact resistance in organic thin film transistors",

abstract = "We present an analysis of the electrical characteristics of pentacene OTFTs fabricated on flexible polyethylene naphthalate (PEN) film. Nickel, silicon dioxide, and palladium were deposited by ion-beam sputtering and patterned by photolithography and lift-off to form the gate electrodes, the gate dielectric layer, and the source and drain contacts, respectively. An octadecyltrichlorosilane vapor prime was used to prepare the SiO2 gate dielectric surface for the deposition of the pentacene layer, which was deposited by thermal evaporation and patterned using a water-soluble, photo-patterned polyvinyl alcohol layer.",

author = "H. Klauk and G. Schmid and Lisong Zhou and Sheraw, {Chris D.} and Huang, {Jiunn Ru} and Nichols, {Jonathan A.} and Jackson, {Thomas N.}",

note = "Publisher Copyright: {\textcopyright} 2001 ISDRS-Univ of Maryland.; International Semiconductor Device Research Symposium, ISDRS 2001 ; Conference date: 05-12-2001 Through 07-12-2001",

year = "2001",

doi = "10.1109/ISDRS.2001.984513",

language = "English (US)",

series = "2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "349--352",

booktitle = "2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings",

address = "United States",

}

Klauk, H, Schmid, G, Zhou, L, Sheraw, CD, Huang, JR, Nichols, JA & Jackson, TN 2001, Contact resistance in organic thin film transistors. in 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings., 984513, 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 349-352, International Semiconductor Device Research Symposium, ISDRS 2001, Washington, United States, 12/5/01. https://doi.org/10.1109/ISDRS.2001.984513

Contact resistance in organic thin film transistors. / Klauk, H.; Schmid, G.; Zhou, Lisong et al.
2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2001. p. 349-352 984513 (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Contact resistance in organic thin film transistors

AU - Klauk, H.

AU - Schmid, G.

AU - Zhou, Lisong

AU - Sheraw, Chris D.

AU - Huang, Jiunn Ru

AU - Nichols, Jonathan A.

AU - Jackson, Thomas N.

PY - 2001

Y1 - 2001

N2 - We present an analysis of the electrical characteristics of pentacene OTFTs fabricated on flexible polyethylene naphthalate (PEN) film. Nickel, silicon dioxide, and palladium were deposited by ion-beam sputtering and patterned by photolithography and lift-off to form the gate electrodes, the gate dielectric layer, and the source and drain contacts, respectively. An octadecyltrichlorosilane vapor prime was used to prepare the SiO2 gate dielectric surface for the deposition of the pentacene layer, which was deposited by thermal evaporation and patterned using a water-soluble, photo-patterned polyvinyl alcohol layer.

AB - We present an analysis of the electrical characteristics of pentacene OTFTs fabricated on flexible polyethylene naphthalate (PEN) film. Nickel, silicon dioxide, and palladium were deposited by ion-beam sputtering and patterned by photolithography and lift-off to form the gate electrodes, the gate dielectric layer, and the source and drain contacts, respectively. An octadecyltrichlorosilane vapor prime was used to prepare the SiO2 gate dielectric surface for the deposition of the pentacene layer, which was deposited by thermal evaporation and patterned using a water-soluble, photo-patterned polyvinyl alcohol layer.

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U2 - 10.1109/ISDRS.2001.984513

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M3 - Conference contribution

AN - SCOPUS:84961775081

T3 - 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings

SP - 349

EP - 352

BT - 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Semiconductor Device Research Symposium, ISDRS 2001

Y2 - 5 December 2001 through 7 December 2001

ER -

Klauk H, Schmid G, Zhou L, Sheraw CD, Huang JR, Nichols JA et al. Contact resistance in organic thin film transistors. In 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2001. p. 349-352. 984513. (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings). doi: 10.1109/ISDRS.2001.984513

Contact resistance in organic thin film transistors

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