@inproceedings{36a0184a6e904b54a37271e0b8aa7ae9,
title = "Contact resistance in pentacene thin film transistors",
abstract = "We present results of the contact resistance extraction for Pd and Au top-contact and Pd bottom-contact pentacene TFTs. The extracted gold TFT contact resistance depends on the gate-source voltage VGS, but shows no dependence on drain-source voltage VDS. The TFT channel resistance is comparable to or exceeds the contact resistance at L < 10 μm. Therefore, L < 10 μm Au TFT performance can be limited by the contacts instead of the channel. We propose a circuit simulating the bottom-contact TFT contact resistance, which is drain bias dependent. We verified the circuit applicability by extracting and comparing the TFT channel resistances at |VDS| = 0.1 V and in the {"}linear{"} regime of TFT operation. The circuit allowed us to extract the physically meaningful Pd bottom-contact TFT resistance values and Pd top-contact TFT gate-voltage dependent Rs. Despite higher initial series resistance Rs for the Pd-contact TFTs, the series resistance in the {"}linear{"} region of the TFT operation is much smaller and only several times larger that the gold top-contact TFT series resistance.",
author = "Necliudov, {P. V.} and Shur, {M. S.} and Gundlach, {D. J.} and Jackson, {T. N.}",
note = "Publisher Copyright: {\textcopyright} 2001 ISDRS-Univ of Maryland.; International Semiconductor Device Research Symposium, ISDRS 2001 ; Conference date: 05-12-2001 Through 07-12-2001",
year = "2001",
doi = "10.1109/ISDRS.2001.984512",
language = "English (US)",
series = "2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "345--348",
booktitle = "2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings",
address = "United States",
}