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Contact resistance in pentacene thin film transistors
P. V. Necliudov
, M. S. Shur
, D. J. Gundlach
,
T. N. Jackson
Materials Research Institute (MRI)
Electrical Engineering
Research output
:
Chapter in Book/Report/Conference proceeding
›
Conference contribution
6
Scopus citations
Overview
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Dive into the research topics of 'Contact resistance in pentacene thin film transistors'. Together they form a unique fingerprint.
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Keyphrases
Contact Resistance
100%
Pentacene Thin Film Transistor
100%
Series Resistance
60%
Bottom Contact
60%
Top Contact
60%
Gate Voltage
40%
Channel Resistance
40%
TFT Channel
40%
Resistance Value
20%
Voltage Dependence
20%
Bias Dependence
20%
Linear Region
20%
Linear Regime
20%
Drain Bias
20%
Resistance Extraction
20%
Drain-source Voltage
20%
Engineering
Series Resistance
100%
Thin-Film Transistor
100%
Pentacene
100%
Source Voltage
66%
Channel Resistance
66%
Applicability
33%
Gate Voltage
33%
Linear Region
33%
Drain Bias
33%
Linear Regime
33%
Material Science
Contact Resistance
100%
Thin-Film Transistor
100%
Electronic Circuit
60%
Chemical Engineering
Film
100%