Contacting graphene

Joshua A. Robinson; Michael Labella; Mike Zhu; Matt Hollander; Richard Kasarda; Zachary Hughes; Kathleen Trumbull; Randal Cavalero; David Snyder

doi:10.1063/1.3549183

Contacting graphene

Joshua A. Robinson, Michael Labella, Mike Zhu, Matt Hollander, Richard Kasarda, Zachary Hughes, Kathleen Trumbull, Randal Cavalero, David Snyder

Research output: Contribution to journal › Article › peer-review

316 Scopus citations

Abstract

We present a robust method for forming high quality ohmic contacts to graphene, which improves the contact resistance by nearly 6000 times compared to untreated metal/graphene interfaces. The optimal specific contact resistance for treated Ti/Au contacts is found to average < 10-7 cm². Additionally, we examine Al/Au, Ti/Au, Ni/Au, Cu/Au, Pt/Au, and Pd/Au contact metallizations and find that most metallizations result in similar specific contact resistances in this work regardless of the work function difference between graphene and the metal overlayer. The results presented in this work serve as a foundation for achieving ultralow resistance ohmic contacts to graphene for high speed electronic and optoelectronic applications.

Original language	English (US)
Article number	053103
Journal	Applied Physics Letters
Volume	98
Issue number	5
DOIs	https://doi.org/10.1063/1.3549183
State	Published - Jan 31 2011

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3549183

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title = "Contacting graphene",

abstract = "We present a robust method for forming high quality ohmic contacts to graphene, which improves the contact resistance by nearly 6000 times compared to untreated metal/graphene interfaces. The optimal specific contact resistance for treated Ti/Au contacts is found to average < 10-7 cm2. Additionally, we examine Al/Au, Ti/Au, Ni/Au, Cu/Au, Pt/Au, and Pd/Au contact metallizations and find that most metallizations result in similar specific contact resistances in this work regardless of the work function difference between graphene and the metal overlayer. The results presented in this work serve as a foundation for achieving ultralow resistance ohmic contacts to graphene for high speed electronic and optoelectronic applications.",

author = "Robinson, {Joshua A.} and Michael Labella and Mike Zhu and Matt Hollander and Richard Kasarda and Zachary Hughes and Kathleen Trumbull and Randal Cavalero and David Snyder",

note = "Funding Information: This work was supported by the Naval Surface Warfare Center Crane (Grant No. N00164-09-C-GR34. Additionally, support for the WiteC Raman, Kratos XPS, and Jeol SEM was provided by the National Nanotechnology Infrastructure Network at Penn State.",

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T1 - Contacting graphene

AU - Robinson, Joshua A.

AU - Labella, Michael

AU - Zhu, Mike

AU - Hollander, Matt

AU - Kasarda, Richard

AU - Hughes, Zachary

AU - Trumbull, Kathleen

AU - Cavalero, Randal

AU - Snyder, David

N1 - Funding Information: This work was supported by the Naval Surface Warfare Center Crane (Grant No. N00164-09-C-GR34. Additionally, support for the WiteC Raman, Kratos XPS, and Jeol SEM was provided by the National Nanotechnology Infrastructure Network at Penn State.

PY - 2011/1/31

Y1 - 2011/1/31

N2 - We present a robust method for forming high quality ohmic contacts to graphene, which improves the contact resistance by nearly 6000 times compared to untreated metal/graphene interfaces. The optimal specific contact resistance for treated Ti/Au contacts is found to average < 10-7 cm2. Additionally, we examine Al/Au, Ti/Au, Ni/Au, Cu/Au, Pt/Au, and Pd/Au contact metallizations and find that most metallizations result in similar specific contact resistances in this work regardless of the work function difference between graphene and the metal overlayer. The results presented in this work serve as a foundation for achieving ultralow resistance ohmic contacts to graphene for high speed electronic and optoelectronic applications.

AB - We present a robust method for forming high quality ohmic contacts to graphene, which improves the contact resistance by nearly 6000 times compared to untreated metal/graphene interfaces. The optimal specific contact resistance for treated Ti/Au contacts is found to average < 10-7 cm2. Additionally, we examine Al/Au, Ti/Au, Ni/Au, Cu/Au, Pt/Au, and Pd/Au contact metallizations and find that most metallizations result in similar specific contact resistances in this work regardless of the work function difference between graphene and the metal overlayer. The results presented in this work serve as a foundation for achieving ultralow resistance ohmic contacts to graphene for high speed electronic and optoelectronic applications.

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Contacting graphene

Abstract

All Science Journal Classification (ASJC) codes

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