Contacts to high aluminum fraction p-type aluminum gallium nitride

Brett A. Hull; Suzanne E. Mohney; Uttiya Chowdhury; Russell D. Dupuis; David Gotthold; Ronald Birkhahn; Milan Pophristic

doi:10.1557/proc-743-l12.2

Contacts to high aluminum fraction p-type aluminum gallium nitride

Brett A. Hull, Suzanne E. Mohney, Uttiya Chowdhury, Russell D. Dupuis, David Gotthold, Ronald Birkhahn, Milan Pophristic

Research output: Contribution to journal › Conference article › peer-review

Abstract

Gold, palladium, platinum or nickel ohmic contacts on Mg doped p-type Al_xGa_1-xN with x = 0.4 and x = 0.45 have been examined. The Au contact provided the lowest contact resistivity with ρ_c = 1.8 (±1.1) × 10^-3 Ωcm², but only following annealing at 850°C. For the Pd, Au, and Pt contacts annealed at greater than 700°C, a rapid degradation in the current-voltage curves was observed upon testing. The degradation was induced by exposure to sub-bandgap light and was reversed with a mild anneal at 500°C. Possible mechanisms for the degradation are discussed.

Original language	English (US)
Pages (from-to)	833-838
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	743
DOIs	https://doi.org/10.1557/proc-743-l12.2
State	Published - 2002
Event	Gan and Related Alloys - 2002 - Boston, MA, United States Duration: Dec 2 2002 → Dec 6 2002

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Contacts to high aluminum fraction p-type aluminum gallium nitride",

abstract = "Gold, palladium, platinum or nickel ohmic contacts on Mg doped p-type AlxGa1-xN with x = 0.4 and x = 0.45 have been examined. The Au contact provided the lowest contact resistivity with ρc = 1.8 (±1.1) × 10-3 Ωcm2, but only following annealing at 850°C. For the Pd, Au, and Pt contacts annealed at greater than 700°C, a rapid degradation in the current-voltage curves was observed upon testing. The degradation was induced by exposure to sub-bandgap light and was reversed with a mild anneal at 500°C. Possible mechanisms for the degradation are discussed.",

author = "Hull, {Brett A.} and Mohney, {Suzanne E.} and Uttiya Chowdhury and Dupuis, {Russell D.} and David Gotthold and Ronald Birkhahn and Milan Pophristic",

year = "2002",

doi = "10.1557/proc-743-l12.2",

language = "English (US)",

volume = "743",

pages = "833--838",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Gan and Related Alloys - 2002 ; Conference date: 02-12-2002 Through 06-12-2002",

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TY - JOUR

T1 - Contacts to high aluminum fraction p-type aluminum gallium nitride

AU - Hull, Brett A.

AU - Mohney, Suzanne E.

AU - Chowdhury, Uttiya

AU - Dupuis, Russell D.

AU - Gotthold, David

AU - Birkhahn, Ronald

AU - Pophristic, Milan

PY - 2002

Y1 - 2002

N2 - Gold, palladium, platinum or nickel ohmic contacts on Mg doped p-type AlxGa1-xN with x = 0.4 and x = 0.45 have been examined. The Au contact provided the lowest contact resistivity with ρc = 1.8 (±1.1) × 10-3 Ωcm2, but only following annealing at 850°C. For the Pd, Au, and Pt contacts annealed at greater than 700°C, a rapid degradation in the current-voltage curves was observed upon testing. The degradation was induced by exposure to sub-bandgap light and was reversed with a mild anneal at 500°C. Possible mechanisms for the degradation are discussed.

AB - Gold, palladium, platinum or nickel ohmic contacts on Mg doped p-type AlxGa1-xN with x = 0.4 and x = 0.45 have been examined. The Au contact provided the lowest contact resistivity with ρc = 1.8 (±1.1) × 10-3 Ωcm2, but only following annealing at 850°C. For the Pd, Au, and Pt contacts annealed at greater than 700°C, a rapid degradation in the current-voltage curves was observed upon testing. The degradation was induced by exposure to sub-bandgap light and was reversed with a mild anneal at 500°C. Possible mechanisms for the degradation are discussed.

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U2 - 10.1557/proc-743-l12.2

DO - 10.1557/proc-743-l12.2

M3 - Conference article

AN - SCOPUS:0038710374

SN - 0272-9172

VL - 743

SP - 833

EP - 838

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Gan and Related Alloys - 2002

Y2 - 2 December 2002 through 6 December 2002

ER -

Contacts to high aluminum fraction p-type aluminum gallium nitride

Abstract

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