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Contacts to high aluminum fraction p-type aluminum gallium nitride
Brett A. Hull
,
Suzanne E. Mohney
, Uttiya Chowdhury
, Russell D. Dupuis
, David Gotthold
, Ronald Birkhahn
, Milan Pophristic
Materials Science and Engineering
Materials Research Institute (MRI)
Research output
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Contribution to journal
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Conference article
›
peer-review
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Keyphrases
Annealing
100%
Aluminum Gallium Nitride (AlGaN)
100%
High Aluminum
100%
Aluminum Fractions
100%
Au Contacts
66%
Possible Mechanisms
33%
Ohmic Contact
33%
Current-voltage Characteristics
33%
Rapid Degradation
33%
PdAu
33%
PdPt
33%
AlxGa1-xN
33%
Gold-platinum
33%
Contact Resistivity
33%
Pt Contacts
33%
Palladium-nickel
33%
Gold-palladium
33%
Sub-bandgap
33%
Mg-doped
33%
Material Science
Aluminum
100%
Gallium Nitride
100%
Electrical Resistivity
50%
Annealing
50%
Current-Voltage Characteristic
50%
Palladium
50%
Platinum
50%
Chemical Engineering
Aluminum Gallium Nitride
100%