Control of semiconductor quantum dot nanostructures: Variants of Si x Ge1-x/Si quantum dot molecules

Jessica K. Murphy, Robert Hull, Devin Pyle, Hao Wang, Jennifer Gray, Jerrold Floro

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


We examine variations in the basic structure of quantum dot molecules (fourfold quantum dot nanostructures forming around a central facetted pit) in the Six Ge1-x/Si (100) system. Arrays of quantum dot molecules are seeded by Ga+ focused ion beam (FIB) prepatterning of the Si substrate prior to epitaxial Si buffer layer growth and Gex Si 1-x film deposition. Five main variants to the regular quantum dot molecule structure are observed. The populations of these variant structures depend on the initial FIB processing conditions; their frequencies generally increase with increasing prepatterned pit depth and with increasing incident ion energy. This work suggests both routes to improving uniformity of regular quantum dot molecule arrays as well as routes to enabling synthesis of a wider range of nanostructure geometries.

Original languageEnglish (US)
Pages (from-to)110291-110295
Number of pages5
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Issue number1
StatePublished - Jan 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


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