TY - JOUR
T1 - Controllable p-Type Doping of 2D WSe2 via Vanadium Substitution
AU - Kozhakhmetov, Azimkhan
AU - Stolz, Samuel
AU - Tan, Anne Marie Z.
AU - Pendurthi, Rahul
AU - Bachu, Saiphaneendra
AU - Turker, Furkan
AU - Alem, Nasim
AU - Kachian, Jessica
AU - Das, Saptarshi
AU - Hennig, Richard G.
AU - Gröning, Oliver
AU - Schuler, Bruno
AU - Robinson, Joshua A.
N1 - Publisher Copyright:
© 2021 Wiley-VCH GmbH
PY - 2021/10/14
Y1 - 2021/10/14
N2 - Scalable substitutional doping of 2D transition metal dichalcogenides is a prerequisite to developing next-generation logic and memory devices based on 2D materials. To date, doping efforts are still nascent. Here, scalable growth and vanadium (V) doping of 2D WSe2 at front-end-of-line and back-end-of-line compatible temperatures of 800 and 400 °C, respectively, is reported. A combination of experimental and theoretical studies confirm that vanadium atoms substitutionally replace tungsten in WSe2, which results in p-type doping via the introduction of discrete defect levels that lie close to the valence band maxima. The p-type nature of the V dopants is further verified by constructed field-effect transistors, where hole conduction becomes dominant with increasing vanadium concentration. Hence, this study presents a method to precisely control the density of intentionally introduced impurities, which is indispensable in the production of electronic-grade wafer-scale extrinsic 2D semiconductors.
AB - Scalable substitutional doping of 2D transition metal dichalcogenides is a prerequisite to developing next-generation logic and memory devices based on 2D materials. To date, doping efforts are still nascent. Here, scalable growth and vanadium (V) doping of 2D WSe2 at front-end-of-line and back-end-of-line compatible temperatures of 800 and 400 °C, respectively, is reported. A combination of experimental and theoretical studies confirm that vanadium atoms substitutionally replace tungsten in WSe2, which results in p-type doping via the introduction of discrete defect levels that lie close to the valence band maxima. The p-type nature of the V dopants is further verified by constructed field-effect transistors, where hole conduction becomes dominant with increasing vanadium concentration. Hence, this study presents a method to precisely control the density of intentionally introduced impurities, which is indispensable in the production of electronic-grade wafer-scale extrinsic 2D semiconductors.
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U2 - 10.1002/adfm.202105252
DO - 10.1002/adfm.202105252
M3 - Article
AN - SCOPUS:85111039110
SN - 1616-301X
VL - 31
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 42
M1 - 2105252
ER -