Abstract
Two-dimensional (2D) hexagonal boron nitride (h-BN) is a fascinating material for variety of applications such as graphene-based devices, transparent/bendable electronics, and deep ultraviolet emitters. However, its technological applications are contingent upon tunable and scalable growth. Here, we demonstrate reproducible and tunable growth of high-quality h-BN crystals on Cu via chemical vapor deposition (CVD) through a precise control of the BN precursor's flow during growth. We present synthesis of both epitaxially-grown triangular flakes and large-area continuous films with tunable thickness ranging from monolayer to 11-layer thick. Using a combination of electron microscopy imaging, spectroscopy, and diffraction analysis, we thoroughly study morphology, thickness, chemistry, grain size, and atomic structure of the grown h-BN crystals. This study could pave the way for developing controlled and reproducible growth of high-quality h-BN crystals with tunable thickness and morphology.
Original language | English (US) |
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Pages (from-to) | 51-56 |
Number of pages | 6 |
Journal | Journal of Crystal Growth |
Volume | 496-497 |
DOIs | |
State | Published - Aug 1 2018 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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Stapleton, J. J. (Manager)
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