Controlled low barrier height n+-InGaAs/n-GaAs pseudomorphic heterojunction schottky diodes

A. W. Kleinsasser, J. M. Woodall, G. D. Pettit, T. N. Jackson, J. Y.F. Tang, P. D. Kirchner

Research output: Contribution to journalArticlepeer-review

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Heterojunction Schottky barrier diodes, in which a pseudomorphic layer of n+-InGaAs played the role of a metal contacting n-GaAs, were grown by molecular beam epitaxy. The junctions had low barrier heights (30-150 meV) which could be controlled by composition and doping of the n+ layer. I-V measurements of the devices confirmed that the devices behaved as Schottky diodes, in accordance with the theory of tunneling and thermally assisted tunneling in the temperature range 4-200 K. An exponential increase in conductance with decreasing In concentration indicates a decrease in barrier height which is at least qualitatively consistent with simulations of the barriers based on earlier experiments, which showed that the band-gap discontinuity appears predominately in the conduction band.

Original languageEnglish (US)
Pages (from-to)1168-1170
Number of pages3
JournalApplied Physics Letters
Issue number12
StatePublished - 1985

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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