Controlling band gap energies in cluster-assembled ionic solids through internal electric fields

Nirmalya K. Chaki; Sukhendu Mandal; Arthur C. Reber; Meichun Qian; Hector M. Saavedra; Paul S. Weiss; Shiv N. Khanna; Ayusman Sen

doi:10.1021/nn101640r

Controlling band gap energies in cluster-assembled ionic solids through internal electric fields

Nirmalya K. Chaki, Sukhendu Mandal, Arthur C. Reber, Meichun Qian, Hector M. Saavedra, Paul S. Weiss, Shiv N. Khanna, Ayusman Sen

Research output: Contribution to journal › Article › peer-review

75 Scopus citations

Abstract

Assembling ionic solids where clusters are arranged in different architectures is a promising strategy for developing band gap-engineered nanomaterials. We synthesized a series of cluster-assembled ionic solids composed of [As₇-Au₂-As₇]^4- in zero-, one-, and two-dimensional architectures. Higher connectivity is expected to decrease the band gap energy through band broadening. However, optical measurements indicate that the band gap energy increases from 1.69 to 1.98 eV when moving from zero- to two-dimensional assemblies. This increase is a result of the local electric fields generated by the adjacent counterions, which preferentially stabilize the occupied cluster electronic states.

Original language	English (US)
Pages (from-to)	5813-5818
Number of pages	6
Journal	ACS nano
Volume	4
Issue number	10
DOIs	https://doi.org/10.1021/nn101640r
State	Published - Oct 26 2010

All Science Journal Classification (ASJC) codes

General Materials Science
General Engineering
General Physics and Astronomy

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10.1021/nn101640r

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abstract = "Assembling ionic solids where clusters are arranged in different architectures is a promising strategy for developing band gap-engineered nanomaterials. We synthesized a series of cluster-assembled ionic solids composed of [As7-Au2-As7]4- in zero-, one-, and two-dimensional architectures. Higher connectivity is expected to decrease the band gap energy through band broadening. However, optical measurements indicate that the band gap energy increases from 1.69 to 1.98 eV when moving from zero- to two-dimensional assemblies. This increase is a result of the local electric fields generated by the adjacent counterions, which preferentially stabilize the occupied cluster electronic states.",

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AU - Chaki, Nirmalya K.

AU - Mandal, Sukhendu

AU - Reber, Arthur C.

AU - Qian, Meichun

AU - Saavedra, Hector M.

AU - Weiss, Paul S.

AU - Khanna, Shiv N.

AU - Sen, Ayusman

PY - 2010/10/26

Y1 - 2010/10/26

N2 - Assembling ionic solids where clusters are arranged in different architectures is a promising strategy for developing band gap-engineered nanomaterials. We synthesized a series of cluster-assembled ionic solids composed of [As7-Au2-As7]4- in zero-, one-, and two-dimensional architectures. Higher connectivity is expected to decrease the band gap energy through band broadening. However, optical measurements indicate that the band gap energy increases from 1.69 to 1.98 eV when moving from zero- to two-dimensional assemblies. This increase is a result of the local electric fields generated by the adjacent counterions, which preferentially stabilize the occupied cluster electronic states.

AB - Assembling ionic solids where clusters are arranged in different architectures is a promising strategy for developing band gap-engineered nanomaterials. We synthesized a series of cluster-assembled ionic solids composed of [As7-Au2-As7]4- in zero-, one-, and two-dimensional architectures. Higher connectivity is expected to decrease the band gap energy through band broadening. However, optical measurements indicate that the band gap energy increases from 1.69 to 1.98 eV when moving from zero- to two-dimensional assemblies. This increase is a result of the local electric fields generated by the adjacent counterions, which preferentially stabilize the occupied cluster electronic states.

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Controlling band gap energies in cluster-assembled ionic solids through internal electric fields

Abstract

All Science Journal Classification (ASJC) codes

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