Controlling quantum dot energies using submonolayer bandstructure engineering

L. Yu; S. Law; D. Jung; M. L. Lee; D. Wasserman

Controlling quantum dot energies using submonolayer bandstructure engineering

L. Yu, S. Law, D. Jung, M. L. Lee, D. Wasserman

Research output: Contribution to conference › Paper › peer-review

Abstract

We demonstrate control of energy states in epitaxially-grown sub-monolayer quantum dots by engineering of the internal bandstructure of the dots. We show shifts of the quantum dot ground state energy from 1.38eV to 1.68eV.

Original language	English (US)
State	Published - 2014
Event	2014 Conference on Lasers and Electro-Optics, CLEO 2014 - San Jose, United States Duration: Jun 8 2014 → Jun 13 2014

Other

Other	2014 Conference on Lasers and Electro-Optics, CLEO 2014
Country/Territory	United States
City	San Jose
Period	6/8/14 → 6/13/14

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials

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@conference{c80f1939521344a287e2c23ccde9780f,

title = "Controlling quantum dot energies using submonolayer bandstructure engineering",

abstract = "We demonstrate control of energy states in epitaxially-grown sub-monolayer quantum dots by engineering of the internal bandstructure of the dots. We show shifts of the quantum dot ground state energy from 1.38eV to 1.68eV.",

author = "L. Yu and S. Law and D. Jung and Lee, {M. L.} and D. Wasserman",

year = "2014",

language = "English (US)",

note = "2014 Conference on Lasers and Electro-Optics, CLEO 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

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TY - CONF

T1 - Controlling quantum dot energies using submonolayer bandstructure engineering

AU - Yu, L.

AU - Law, S.

AU - Jung, D.

AU - Lee, M. L.

AU - Wasserman, D.

PY - 2014

Y1 - 2014

N2 - We demonstrate control of energy states in epitaxially-grown sub-monolayer quantum dots by engineering of the internal bandstructure of the dots. We show shifts of the quantum dot ground state energy from 1.38eV to 1.68eV.

AB - We demonstrate control of energy states in epitaxially-grown sub-monolayer quantum dots by engineering of the internal bandstructure of the dots. We show shifts of the quantum dot ground state energy from 1.38eV to 1.68eV.

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UR - http://www.scopus.com/inward/citedby.url?scp=84944698701&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:84944698701

T2 - 2014 Conference on Lasers and Electro-Optics, CLEO 2014

Y2 - 8 June 2014 through 13 June 2014

ER -

Controlling quantum dot energies using submonolayer bandstructure engineering

Abstract

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All Science Journal Classification (ASJC) codes

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