Converse-piezoelectric effect on current-voltage characteristics of symmetric ferroelectric tunnel junctions

Xiaoyan Lu; Wenwu Cao; Wenhua Jiang; Hui Li

doi:10.1063/1.3673600

Converse-piezoelectric effect on current-voltage characteristics of symmetric ferroelectric tunnel junctions

Xiaoyan Lu, Wenwu Cao, Wenhua Jiang, Hui Li

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Current-voltage characteristics of symmetric ferroelectric tunnel junction were studied in an ultrathin ferroelectric barrier with the consideration of the thickness and strain dependent converse-piezoelectric effect. With proper boundary conditions, large piezoelectric strain can be achieved in the ferroelectric barrier when its thickness is in the vicinity of the critical thickness. Because of the exponential relationship between the tunneling current and the effective film thickness, tunneling current can be greatly enhanced by the external electric field and substrate induced strain.

Original language	English (US)
Article number	014103
Journal	Journal of Applied Physics
Volume	111
Issue number	1
DOIs	https://doi.org/10.1063/1.3673600
State	Published - Jan 1 2012

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.3673600

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title = "Converse-piezoelectric effect on current-voltage characteristics of symmetric ferroelectric tunnel junctions",

abstract = "Current-voltage characteristics of symmetric ferroelectric tunnel junction were studied in an ultrathin ferroelectric barrier with the consideration of the thickness and strain dependent converse-piezoelectric effect. With proper boundary conditions, large piezoelectric strain can be achieved in the ferroelectric barrier when its thickness is in the vicinity of the critical thickness. Because of the exponential relationship between the tunneling current and the effective film thickness, tunneling current can be greatly enhanced by the external electric field and substrate induced strain.",

author = "Xiaoyan Lu and Wenwu Cao and Wenhua Jiang and Hui Li",

note = "Funding Information: This research was supported by the National Science Foundation of China (Nos. 51078107, 11002044, 90815022), the China Postdoctoral Science Foundation (Nos. 20090460068, 201104437) and the Oversea Study Program from the Harbin Institute of Technology. ",

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AU - Lu, Xiaoyan

AU - Cao, Wenwu

AU - Jiang, Wenhua

AU - Li, Hui

N1 - Funding Information: This research was supported by the National Science Foundation of China (Nos. 51078107, 11002044, 90815022), the China Postdoctoral Science Foundation (Nos. 20090460068, 201104437) and the Oversea Study Program from the Harbin Institute of Technology.

PY - 2012/1/1

Y1 - 2012/1/1

N2 - Current-voltage characteristics of symmetric ferroelectric tunnel junction were studied in an ultrathin ferroelectric barrier with the consideration of the thickness and strain dependent converse-piezoelectric effect. With proper boundary conditions, large piezoelectric strain can be achieved in the ferroelectric barrier when its thickness is in the vicinity of the critical thickness. Because of the exponential relationship between the tunneling current and the effective film thickness, tunneling current can be greatly enhanced by the external electric field and substrate induced strain.

AB - Current-voltage characteristics of symmetric ferroelectric tunnel junction were studied in an ultrathin ferroelectric barrier with the consideration of the thickness and strain dependent converse-piezoelectric effect. With proper boundary conditions, large piezoelectric strain can be achieved in the ferroelectric barrier when its thickness is in the vicinity of the critical thickness. Because of the exponential relationship between the tunneling current and the effective film thickness, tunneling current can be greatly enhanced by the external electric field and substrate induced strain.

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Converse-piezoelectric effect on current-voltage characteristics of symmetric ferroelectric tunnel junctions

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