Abstract
We have investigated the cooling effect of field emission from semiconductors at temperatures up to 900K. It is found that at high temperatures, field emission cooling is meaningful for cathodes of material with low resistivity such as PbTe. For n-type semiconductors with low resistivity, the Nottingham energy exchange in field emission can be comparable to or greater than the Peltier coefficient.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference |
| Pages | 5-6 |
| Number of pages | 2 |
| State | Published - 2011 |
| Event | 2011 24th International Vacuum Nanoelectronics Conference, IVNC 2011 - Wuppertal, Germany Duration: Jul 18 2011 → Jul 22 2011 |
Other
| Other | 2011 24th International Vacuum Nanoelectronics Conference, IVNC 2011 |
|---|---|
| Country/Territory | Germany |
| City | Wuppertal |
| Period | 7/18/11 → 7/22/11 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering