Core-shell type of tunneling nanowire FETs for large driving current with unipolarity

Shengxi Huang; Zhe Wang; Ze Yuan; Jinyu Zhang; Zhiping Yu

doi:10.1109/EDSSC.2011.6117670

Core-shell type of tunneling nanowire FETs for large driving current with unipolarity

Shengxi Huang, Zhe Wang, Ze Yuan, Jinyu Zhang, Zhiping Yu

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

A radial-heterojunction (HJ), as opposed to axial-HJ, tunneling-FET (tFET) is proposed to increase the driving current as much as 4 times while maintaining steep subthreshold swing (SS) and non-ambipolarity (i.e., unipolar transfer characteristics). The core/shell nanowire is adopted for the bulk of the device, with source region in the core of the wire and shell for the channel. The tunneling thus occurs in the radial direction, increasing the junction area substantially and leading to large on current. The core-shell junction is made of Ge-Si, and a lightly-doped drain-extension is used to suppress ambipolarity, which impedes the application of many types of tunneling devices in digital circuits. Comparison with unipolar axial-HJ GAA NW-tFET is made to show the advantage of the radial structure.

Original language	English (US)
Title of host publication	2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
DOIs	https://doi.org/10.1109/EDSSC.2011.6117670
State	Published - 2011
Event	2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011 - Tianjin, China Duration: Nov 17 2011 → Nov 18 2011

Publication series

Name	2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011

Other

Other	2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
Country/Territory	China
City	Tianjin
Period	11/17/11 → 11/18/11

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/EDSSC.2011.6117670

Cite this

Huang, S., Wang, Z., Yuan, Z., Zhang, J., & Yu, Z. (2011). Core-shell type of tunneling nanowire FETs for large driving current with unipolarity. In 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011 Article 6117670 (2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011). https://doi.org/10.1109/EDSSC.2011.6117670

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title = "Core-shell type of tunneling nanowire FETs for large driving current with unipolarity",

abstract = "A radial-heterojunction (HJ), as opposed to axial-HJ, tunneling-FET (tFET) is proposed to increase the driving current as much as 4 times while maintaining steep subthreshold swing (SS) and non-ambipolarity (i.e., unipolar transfer characteristics). The core/shell nanowire is adopted for the bulk of the device, with source region in the core of the wire and shell for the channel. The tunneling thus occurs in the radial direction, increasing the junction area substantially and leading to large on current. The core-shell junction is made of Ge-Si, and a lightly-doped drain-extension is used to suppress ambipolarity, which impedes the application of many types of tunneling devices in digital circuits. Comparison with unipolar axial-HJ GAA NW-tFET is made to show the advantage of the radial structure.",

author = "Shengxi Huang and Zhe Wang and Ze Yuan and Jinyu Zhang and Zhiping Yu",

year = "2011",

doi = "10.1109/EDSSC.2011.6117670",

language = "English (US)",

isbn = "9781457719974",

series = "2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011",

booktitle = "2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011",

note = "2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011 ; Conference date: 17-11-2011 Through 18-11-2011",

}

Huang, S, Wang, Z, Yuan, Z, Zhang, J & Yu, Z 2011, Core-shell type of tunneling nanowire FETs for large driving current with unipolarity. in 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011., 6117670, 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011, 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011, Tianjin, China, 11/17/11. https://doi.org/10.1109/EDSSC.2011.6117670

Core-shell type of tunneling nanowire FETs for large driving current with unipolarity. / Huang, Shengxi; Wang, Zhe; Yuan, Ze et al.
2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011. 2011. 6117670 (2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Core-shell type of tunneling nanowire FETs for large driving current with unipolarity

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AU - Wang, Zhe

AU - Yuan, Ze

AU - Zhang, Jinyu

AU - Yu, Zhiping

PY - 2011

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N2 - A radial-heterojunction (HJ), as opposed to axial-HJ, tunneling-FET (tFET) is proposed to increase the driving current as much as 4 times while maintaining steep subthreshold swing (SS) and non-ambipolarity (i.e., unipolar transfer characteristics). The core/shell nanowire is adopted for the bulk of the device, with source region in the core of the wire and shell for the channel. The tunneling thus occurs in the radial direction, increasing the junction area substantially and leading to large on current. The core-shell junction is made of Ge-Si, and a lightly-doped drain-extension is used to suppress ambipolarity, which impedes the application of many types of tunneling devices in digital circuits. Comparison with unipolar axial-HJ GAA NW-tFET is made to show the advantage of the radial structure.

AB - A radial-heterojunction (HJ), as opposed to axial-HJ, tunneling-FET (tFET) is proposed to increase the driving current as much as 4 times while maintaining steep subthreshold swing (SS) and non-ambipolarity (i.e., unipolar transfer characteristics). The core/shell nanowire is adopted for the bulk of the device, with source region in the core of the wire and shell for the channel. The tunneling thus occurs in the radial direction, increasing the junction area substantially and leading to large on current. The core-shell junction is made of Ge-Si, and a lightly-doped drain-extension is used to suppress ambipolarity, which impedes the application of many types of tunneling devices in digital circuits. Comparison with unipolar axial-HJ GAA NW-tFET is made to show the advantage of the radial structure.

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T3 - 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011

BT - 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011

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Y2 - 17 November 2011 through 18 November 2011

ER -

Core-shell type of tunneling nanowire FETs for large driving current with unipolarity

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