TY - GEN
T1 - Core-shell type of tunneling nanowire FETs for large driving current with unipolarity
AU - Huang, Shengxi
AU - Wang, Zhe
AU - Yuan, Ze
AU - Zhang, Jinyu
AU - Yu, Zhiping
PY - 2011/12/1
Y1 - 2011/12/1
N2 - A radial-heterojunction (HJ), as opposed to axial-HJ, tunneling-FET (tFET) is proposed to increase the driving current as much as 4 times while maintaining steep subthreshold swing (SS) and non-ambipolarity (i.e., unipolar transfer characteristics). The core/shell nanowire is adopted for the bulk of the device, with source region in the core of the wire and shell for the channel. The tunneling thus occurs in the radial direction, increasing the junction area substantially and leading to large on current. The core-shell junction is made of Ge-Si, and a lightly-doped drain-extension is used to suppress ambipolarity, which impedes the application of many types of tunneling devices in digital circuits. Comparison with unipolar axial-HJ GAA NW-tFET is made to show the advantage of the radial structure.
AB - A radial-heterojunction (HJ), as opposed to axial-HJ, tunneling-FET (tFET) is proposed to increase the driving current as much as 4 times while maintaining steep subthreshold swing (SS) and non-ambipolarity (i.e., unipolar transfer characteristics). The core/shell nanowire is adopted for the bulk of the device, with source region in the core of the wire and shell for the channel. The tunneling thus occurs in the radial direction, increasing the junction area substantially and leading to large on current. The core-shell junction is made of Ge-Si, and a lightly-doped drain-extension is used to suppress ambipolarity, which impedes the application of many types of tunneling devices in digital circuits. Comparison with unipolar axial-HJ GAA NW-tFET is made to show the advantage of the radial structure.
UR - http://www.scopus.com/inward/record.url?scp=84862972534&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84862972534&partnerID=8YFLogxK
U2 - 10.1109/EDSSC.2011.6117670
DO - 10.1109/EDSSC.2011.6117670
M3 - Conference contribution
AN - SCOPUS:84862972534
SN - 9781457719974
T3 - 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
BT - 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
T2 - 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
Y2 - 17 November 2011 through 18 November 2011
ER -