Correction to: Effects of Sb and Bi Doping in SnTe Layers Grown by Molecular Beam Epitaxy (ACS Appl. Electron. Mater. (2025) 7:8 (3543−3551) DOI: 10.1021/acsaelm.5c00299)

Qihua Zhang; Mary Kathleen Caucci; Maria Hilse; Analaura Diaz Gomez; Susan Sinnott; Stephanie Law

doi:10.1021/acsaelm.5c01087

Correction to: Effects of Sb and Bi Doping in SnTe Layers Grown by Molecular Beam Epitaxy (ACS Appl. Electron. Mater. (2025) 7:8 (3543−3551) DOI: 10.1021/acsaelm.5c00299)

Qihua Zhang
, Mary Kathleen Caucci
, Maria Hilse
, Analaura Diaz Gomez
, Susan Sinnott
, Stephanie Law

Research output: Contribution to journal › Comment/debate › peer-review

Abstract

In the original version of this article, funding for A.D.G. from NSF EEC 2244201 was omitted. This correction does not alter the major conclusions of this work.

Original language	English (US)
Pages (from-to)	5730
Number of pages	1
Journal	ACS Applied Electronic Materials
Volume	7
Issue number	12
DOIs	https://doi.org/10.1021/acsaelm.5c01087
State	Published - Jun 24 2025

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Materials Chemistry
Electrochemistry

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10.1021/acsaelm.5c01087

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@article{d60ec0ad82814b31be483fc9f6b480ad,

title = "Correction to: Effects of Sb and Bi Doping in SnTe Layers Grown by Molecular Beam Epitaxy (ACS Appl. Electron. Mater. (2025) 7:8 (3543−3551) DOI: 10.1021/acsaelm.5c00299)",

abstract = "In the original version of this article, funding for A.D.G. from NSF EEC 2244201 was omitted. This correction does not alter the major conclusions of this work.",

author = "Qihua Zhang and Caucci, \{Mary Kathleen\} and Maria Hilse and \{Diaz Gomez\}, Analaura and Susan Sinnott and Stephanie Law",

year = "2025",

month = jun,

day = "24",

doi = "10.1021/acsaelm.5c01087",

language = "English (US)",

volume = "7",

pages = "5730",

journal = "ACS Applied Electronic Materials",

issn = "2637-6113",

publisher = "American Chemical Society",

number = "12",

}

Correction to: Effects of Sb and Bi Doping in SnTe Layers Grown by Molecular Beam Epitaxy (ACS Appl. Electron. Mater. (2025) 7:8 (3543−3551) DOI: 10.1021/acsaelm.5c00299). / Zhang, Qihua; Caucci, Mary Kathleen; Hilse, Maria et al.
In: ACS Applied Electronic Materials, Vol. 7, No. 12, 24.06.2025, p. 5730.

Research output: Contribution to journal › Comment/debate › peer-review

TY - JOUR

T1 - Correction to

T2 - Effects of Sb and Bi Doping in SnTe Layers Grown by Molecular Beam Epitaxy (ACS Appl. Electron. Mater. (2025) 7:8 (3543−3551) DOI: 10.1021/acsaelm.5c00299)

AU - Zhang, Qihua

AU - Caucci, Mary Kathleen

AU - Hilse, Maria

AU - Diaz Gomez, Analaura

AU - Sinnott, Susan

AU - Law, Stephanie

PY - 2025/6/24

Y1 - 2025/6/24

N2 - In the original version of this article, funding for A.D.G. from NSF EEC 2244201 was omitted. This correction does not alter the major conclusions of this work.

AB - In the original version of this article, funding for A.D.G. from NSF EEC 2244201 was omitted. This correction does not alter the major conclusions of this work.

UR - https://www.scopus.com/pages/publications/105007498231

UR - https://www.scopus.com/pages/publications/105007498231#tab=citedBy

U2 - 10.1021/acsaelm.5c01087

DO - 10.1021/acsaelm.5c01087

M3 - Comment/debate

AN - SCOPUS:105007498231

SN - 2637-6113

VL - 7

SP - 5730

JO - ACS Applied Electronic Materials

JF - ACS Applied Electronic Materials

IS - 12

ER -

Correction to: Effects of Sb and Bi Doping in SnTe Layers Grown by Molecular Beam Epitaxy (ACS Appl. Electron. Mater. (2025) 7:8 (3543−3551) DOI: 10.1021/acsaelm.5c00299)

Abstract

All Science Journal Classification (ASJC) codes

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