Correlating raman spectral signatures with carrier mobility in epitaxial graphene: A guide to achieving high mobility on the wafer scale

Joshua A. Robinson; Maxwell Wetherington; Joseph L. Tedesco; Paul M. Campbell; Xiaojun Weng; Joseph Stitt; Mark A. Fanton; Eric Frantz; David Snyder; Brenda L. VanMil; Glenn G. Jernigan; L. Myers Ward Rachael; Charles R. Eddy; D. Kurt Gaskill

doi:10.1021/nl901073g

Correlating raman spectral signatures with carrier mobility in epitaxial graphene: A guide to achieving high mobility on the wafer scale

Joshua A. Robinson, Maxwell Wetherington, Joseph L. Tedesco, Paul M. Campbell, Xiaojun Weng, Joseph Stitt, Mark A. Fanton, Eric Frantz, David Snyder, Brenda L. VanMil, Glenn G. Jernigan, L. Myers Ward Rachael, Charles R. Eddy, D. Kurt Gaskill

Research output: Contribution to journal › Article › peer-review

186 Scopus citations

Abstract

We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on SiC(0001) is highly dependent on thickness and monolayer strain uniformity. Additionally, we achieve high mobility epitaxial graphene (18100 cm2/(V s) at room temperature) on SiC(0001) and show that carrier mobility depends strongly on the graphene layer stacking.

Original language	English (US)
Pages (from-to)	2873-2876
Number of pages	4
Journal	Nano letters
Volume	9
Issue number	8
DOIs	https://doi.org/10.1021/nl901073g
State	Published - Aug 12 2009

All Science Journal Classification (ASJC) codes

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl901073g

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Robinson, J. A., Wetherington, M., Tedesco, J. L., Campbell, P. M., Weng, X., Stitt, J., Fanton, M. A., Frantz, E., Snyder, D., VanMil, B. L., Jernigan, G. G., Rachael, L. M. W., Eddy, C. R., & Gaskill, D. K. (2009). Correlating raman spectral signatures with carrier mobility in epitaxial graphene: A guide to achieving high mobility on the wafer scale. Nano letters, 9(8), 2873-2876. https://doi.org/10.1021/nl901073g

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title = "Correlating raman spectral signatures with carrier mobility in epitaxial graphene: A guide to achieving high mobility on the wafer scale",

abstract = "We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on SiC(0001) is highly dependent on thickness and monolayer strain uniformity. Additionally, we achieve high mobility epitaxial graphene (18100 cm2/(V s) at room temperature) on SiC(0001) and show that carrier mobility depends strongly on the graphene layer stacking.",

author = "Robinson, {Joshua A.} and Maxwell Wetherington and Tedesco, {Joseph L.} and Campbell, {Paul M.} and Xiaojun Weng and Joseph Stitt and Fanton, {Mark A.} and Eric Frantz and David Snyder and VanMil, {Brenda L.} and Jernigan, {Glenn G.} and Rachael, {L. Myers Ward} and Eddy, {Charles R.} and Gaskill, {D. Kurt}",

year = "2009",

month = aug,

day = "12",

doi = "10.1021/nl901073g",

language = "English (US)",

volume = "9",

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journal = "Nano letters",

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publisher = "American Chemical Society",

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Robinson, JA , Wetherington, M, Tedesco, JL, Campbell, PM, Weng, X, Stitt, J , Fanton, MA, Frantz, E, Snyder, D, VanMil, BL, Jernigan, GG, Rachael, LMW, Eddy, CR & Gaskill, DK 2009, 'Correlating raman spectral signatures with carrier mobility in epitaxial graphene: A guide to achieving high mobility on the wafer scale', Nano letters, vol. 9, no. 8, pp. 2873-2876. https://doi.org/10.1021/nl901073g

TY - JOUR

T1 - Correlating raman spectral signatures with carrier mobility in epitaxial graphene

T2 - A guide to achieving high mobility on the wafer scale

AU - Robinson, Joshua A.

AU - Wetherington, Maxwell

AU - Tedesco, Joseph L.

AU - Campbell, Paul M.

AU - Weng, Xiaojun

AU - Stitt, Joseph

AU - Fanton, Mark A.

AU - Frantz, Eric

AU - Snyder, David

AU - VanMil, Brenda L.

AU - Jernigan, Glenn G.

AU - Rachael, L. Myers Ward

AU - Eddy, Charles R.

AU - Gaskill, D. Kurt

PY - 2009/8/12

Y1 - 2009/8/12

N2 - We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on SiC(0001) is highly dependent on thickness and monolayer strain uniformity. Additionally, we achieve high mobility epitaxial graphene (18100 cm2/(V s) at room temperature) on SiC(0001) and show that carrier mobility depends strongly on the graphene layer stacking.

AB - We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on SiC(0001) is highly dependent on thickness and monolayer strain uniformity. Additionally, we achieve high mobility epitaxial graphene (18100 cm2/(V s) at room temperature) on SiC(0001) and show that carrier mobility depends strongly on the graphene layer stacking.

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DO - 10.1021/nl901073g

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EP - 2876

JO - Nano letters

JF - Nano letters

IS - 8

ER -

Correlating raman spectral signatures with carrier mobility in epitaxial graphene: A guide to achieving high mobility on the wafer scale

Abstract

All Science Journal Classification (ASJC) codes

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