Correlation between microstructure, electronic properties and flicker noise in organic thin film transistors

Oana D. Jurchescu; Behrang H. Hamadani; Hao D. Xiong; Sungkyu K. Park; Sankar Subramanian; Neil M. Zimmerman; John E. Anthony; Thomas N. Jackson; David J. Gundlach

doi:10.1063/1.2903508

Correlation between microstructure, electronic properties and flicker noise in organic thin film transistors

Oana D. Jurchescu, Behrang H. Hamadani, Hao D. Xiong, Sungkyu K. Park, Sankar Subramanian, Neil M. Zimmerman, John E. Anthony, Thomas N. Jackson, David J. Gundlach

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83 Scopus citations

Abstract

We report on observations of a correlation between the microstructure of organic thin films and their electronic properties when incorporated in field-effect transistors. We present a simple method to induce enhanced grain growth in solution-processed thin film transistors by chemical modification of the source-drain contacts. This leads to improved device performance and gives a unique thin film microstructure for fundamental studies concerning the effect of structural order on the charge transport. We demonstrate that the 1f flicker noise is sensitive to organic semiconductor thin film microstructure changes in the transistor channel.

Original language	English (US)
Article number	132103
Journal	Applied Physics Letters
Volume	92
Issue number	13
DOIs	https://doi.org/10.1063/1.2903508
State	Published - 2008

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2903508

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title = "Correlation between microstructure, electronic properties and flicker noise in organic thin film transistors",

abstract = "We report on observations of a correlation between the microstructure of organic thin films and their electronic properties when incorporated in field-effect transistors. We present a simple method to induce enhanced grain growth in solution-processed thin film transistors by chemical modification of the source-drain contacts. This leads to improved device performance and gives a unique thin film microstructure for fundamental studies concerning the effect of structural order on the charge transport. We demonstrate that the 1f flicker noise is sensitive to organic semiconductor thin film microstructure changes in the transistor channel.",

author = "Jurchescu, {Oana D.} and Hamadani, {Behrang H.} and Xiong, {Hao D.} and Park, {Sungkyu K.} and Sankar Subramanian and Zimmerman, {Neil M.} and Anthony, {John E.} and Jackson, {Thomas N.} and Gundlach, {David J.}",

year = "2008",

doi = "10.1063/1.2903508",

language = "English (US)",

volume = "92",

journal = "Applied Physics Letters",

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AU - Jurchescu, Oana D.

AU - Hamadani, Behrang H.

AU - Xiong, Hao D.

AU - Park, Sungkyu K.

AU - Subramanian, Sankar

AU - Zimmerman, Neil M.

AU - Anthony, John E.

AU - Jackson, Thomas N.

AU - Gundlach, David J.

PY - 2008

Y1 - 2008

N2 - We report on observations of a correlation between the microstructure of organic thin films and their electronic properties when incorporated in field-effect transistors. We present a simple method to induce enhanced grain growth in solution-processed thin film transistors by chemical modification of the source-drain contacts. This leads to improved device performance and gives a unique thin film microstructure for fundamental studies concerning the effect of structural order on the charge transport. We demonstrate that the 1f flicker noise is sensitive to organic semiconductor thin film microstructure changes in the transistor channel.

AB - We report on observations of a correlation between the microstructure of organic thin films and their electronic properties when incorporated in field-effect transistors. We present a simple method to induce enhanced grain growth in solution-processed thin film transistors by chemical modification of the source-drain contacts. This leads to improved device performance and gives a unique thin film microstructure for fundamental studies concerning the effect of structural order on the charge transport. We demonstrate that the 1f flicker noise is sensitive to organic semiconductor thin film microstructure changes in the transistor channel.

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DO - 10.1063/1.2903508

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VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 132103

ER -

Correlation between microstructure, electronic properties and flicker noise in organic thin film transistors

Abstract

All Science Journal Classification (ASJC) codes

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