Correlation of growth stress and structural evolution during metalorganic chemical vapor deposition of GaN on (111) Si

Keyphrases

• Metal-organic Chemical Vapor Deposition (MOCVD) 100%
• Compressive Stress 100%
• Buffer Layer 100%
• Structural Evolution 100%
• Microstructural Evolution 100%
• Stress Evolution 100%
• Growth Stress 100%
• Cross-sectional Transmission Electron Microscopy 50%
• Tensile Stress 50%
• Lattice Parameter 50%
• Thermal Expansion Mismatch 50%
• Density Reduction 50%
• In-situ Test 50%
• GaN Layers 50%
• Dislocation Density 50%
• Compositionally Graded 50%
• Threading Dislocation Density 50%
• AlN Buffer Layer 50%
• Film Cracking 50%

Material Science

• Chemical Vapor Deposition 100%
• Buffer Layer 100%
• Film 66%
• Density 66%
• Microstructural Evolution 66%
• Transmission Electron Microscopy 33%
• Thermal Expansion 33%
• Aluminum Nitride 33%
• Ultimate Tensile Strength 33%
• Lattice Constant 33%
• In Situ Stress Measurement 33%