Correlation of performance and hot carrier stress reliability of polycrystalline silicon thin film transistors with substrates and substrate coating

Y. Z. Wang; O. O. Awadelkarim

doi:10.1557/proc-508-91

Correlation of performance and hot carrier stress reliability of polycrystalline silicon thin film transistors with substrates and substrate coating

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report on the performance and hot carrier stress (HCS) reliability of n-channel poly-Si TFTs fabricated on bare or SiO₂-coated low-alkali glass, or fused silica substrates. Low-pressure chemical vapor deposited (LPCVD) SiO₂ films with different thicknesses are used as impurity diffusion barrier layers. We have found that the performance and HCS reliability of n-TFTs on the SiO₂-coated glass are superior to those of n-TFTs on bare glass, and comparable to those of TFTs on fused silica. We also explore the impact of the SiO₂ coating thickness on the performance and HCS reliability of the TFTs. The HCS reliability of the TFTs on SiO₂-coated glass substrates is observed to depend on the SiO₂ coating thickness. This is explained in terms of a phenomenological model which involves impurity and grain boundary traps.

Original language	English (US)
Pages (from-to)	91-96
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	508
DOIs	https://doi.org/10.1557/proc-508-91
State	Published - Jan 1 1998
Event	Proceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 13 1998 → Apr 15 1998

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Correlation of performance and hot carrier stress reliability of polycrystalline silicon thin film transistors with substrates and substrate coating",

abstract = "We report on the performance and hot carrier stress (HCS) reliability of n-channel poly-Si TFTs fabricated on bare or SiO2-coated low-alkali glass, or fused silica substrates. Low-pressure chemical vapor deposited (LPCVD) SiO2 films with different thicknesses are used as impurity diffusion barrier layers. We have found that the performance and HCS reliability of n-TFTs on the SiO2-coated glass are superior to those of n-TFTs on bare glass, and comparable to those of TFTs on fused silica. We also explore the impact of the SiO2 coating thickness on the performance and HCS reliability of the TFTs. The HCS reliability of the TFTs on SiO2-coated glass substrates is observed to depend on the SiO2 coating thickness. This is explained in terms of a phenomenological model which involves impurity and grain boundary traps.",

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AU - Wang, Y. Z.

AU - Awadelkarim, O. O.

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N2 - We report on the performance and hot carrier stress (HCS) reliability of n-channel poly-Si TFTs fabricated on bare or SiO2-coated low-alkali glass, or fused silica substrates. Low-pressure chemical vapor deposited (LPCVD) SiO2 films with different thicknesses are used as impurity diffusion barrier layers. We have found that the performance and HCS reliability of n-TFTs on the SiO2-coated glass are superior to those of n-TFTs on bare glass, and comparable to those of TFTs on fused silica. We also explore the impact of the SiO2 coating thickness on the performance and HCS reliability of the TFTs. The HCS reliability of the TFTs on SiO2-coated glass substrates is observed to depend on the SiO2 coating thickness. This is explained in terms of a phenomenological model which involves impurity and grain boundary traps.

AB - We report on the performance and hot carrier stress (HCS) reliability of n-channel poly-Si TFTs fabricated on bare or SiO2-coated low-alkali glass, or fused silica substrates. Low-pressure chemical vapor deposited (LPCVD) SiO2 films with different thicknesses are used as impurity diffusion barrier layers. We have found that the performance and HCS reliability of n-TFTs on the SiO2-coated glass are superior to those of n-TFTs on bare glass, and comparable to those of TFTs on fused silica. We also explore the impact of the SiO2 coating thickness on the performance and HCS reliability of the TFTs. The HCS reliability of the TFTs on SiO2-coated glass substrates is observed to depend on the SiO2 coating thickness. This is explained in terms of a phenomenological model which involves impurity and grain boundary traps.

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Correlation of performance and hot carrier stress reliability of polycrystalline silicon thin film transistors with substrates and substrate coating

Abstract

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