Cost-effective integration of an a-Si:H solar cell and a zno tft ring oscillator-toward an autonomously powered circuit

Hang Beum Shin; J. Israel Ramirez; Thomas N. Jackson

doi:10.1109/LED.2013.2285117

Cost-effective integration of an a-Si:H solar cell and a zno tft ring oscillator-toward an autonomously powered circuit

Hang Beum Shin, J. Israel Ramirez, Thomas N. Jackson

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Cost-effective integration of a-Si:H solar cells and oxide-based thin-film transistor (TFT) circuits may lead to broader battery-free device applications. We demonstrate a n-i-p a-Si:H 15-series connected solar cell that supplies power to a ZnO-based ring oscillator. The ring oscillator can operate at 28 kHz at 6 V, corresponding to ${\approx}{\rm 100}~{\rm mW}/{\rm cm}² illumination. This letter describes the integration and compact fabrication of the a-Si:H solar cell and ZnO TFT ring oscillator. The fabrication process includes several mask steps to reduce the number of processing steps.

Original language	English (US)
Article number	6646206
Pages (from-to)	1530-1532
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	12
DOIs	https://doi.org/10.1109/LED.2013.2285117
State	Published - Dec 2013

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2013.2285117

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abstract = "Cost-effective integration of a-Si:H solar cells and oxide-based thin-film transistor (TFT) circuits may lead to broader battery-free device applications. We demonstrate a n-i-p a-Si:H 15-series connected solar cell that supplies power to a ZnO-based ring oscillator. The ring oscillator can operate at 28 kHz at 6 V, corresponding to ${\approx}{\rm 100}~{\rm mW}/{\rm cm}2 illumination. This letter describes the integration and compact fabrication of the a-Si:H solar cell and ZnO TFT ring oscillator. The fabrication process includes several mask steps to reduce the number of processing steps.",

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AB - Cost-effective integration of a-Si:H solar cells and oxide-based thin-film transistor (TFT) circuits may lead to broader battery-free device applications. We demonstrate a n-i-p a-Si:H 15-series connected solar cell that supplies power to a ZnO-based ring oscillator. The ring oscillator can operate at 28 kHz at 6 V, corresponding to ${\approx}{\rm 100}~{\rm mW}/{\rm cm}2 illumination. This letter describes the integration and compact fabrication of the a-Si:H solar cell and ZnO TFT ring oscillator. The fabrication process includes several mask steps to reduce the number of processing steps.

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Cost-effective integration of an a-Si:H solar cell and a zno tft ring oscillator-toward an autonomously powered circuit

Abstract

All Science Journal Classification (ASJC) codes

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