Abstract
Cost-effective integration of a-Si:H solar cells and oxide-based thin-film transistor (TFT) circuits may lead to broader battery-free device applications. We demonstrate a n-i-p a-Si:H 15-series connected solar cell that supplies power to a ZnO-based ring oscillator. The ring oscillator can operate at 28 kHz at 6 V, corresponding to ${\approx}{\rm 100}~{\rm mW}/{\rm cm}2 illumination. This letter describes the integration and compact fabrication of the a-Si:H solar cell and ZnO TFT ring oscillator. The fabrication process includes several mask steps to reduce the number of processing steps.
| Original language | English (US) |
|---|---|
| Article number | 6646206 |
| Pages (from-to) | 1530-1532 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 34 |
| Issue number | 12 |
| DOIs | |
| State | Published - Dec 2013 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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