@inproceedings{2228b2cec5de4d399d01f66280416a5a,
title = "Cost-effective layer transfer by controlled spalling technology",
abstract = "Although historically studied as a failure mode, substrate spalling can be transformed into a versatile layer transfer method by carefully controlling the thickness and intrinsic stress of a surface layer, and mechanically guiding the fracture path. This Controlled Spalling process requires no specialized equipment and can be applied to essentially any brittle substrate. We have successfully demonstrated i) device fabrication in Si, Ge, and III-V based materials, ii) removal of fully-processed CMOS circuits, iii) kerffree ingot slicing, iv) 300 mm diameter layer transfer and v) a wide range of other materials such as GaN grown on sapphire.",
author = "Bedell, \{S. W.\} and D. Shahrjerdi and K. Fogel and P. Lauro and B. Hekmatshoar and N. Li and Ott, \{J. A.\} and Sadana, \{D. K.\}",
year = "2013",
doi = "10.1149/05007.0315ecst",
language = "English (US)",
isbn = "9781607683551",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "7",
pages = "315--323",
booktitle = "Semiconductor Wafer Bonding 12",
edition = "7",
note = "12th International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications - ECS Fall 2012 Meeting ; Conference date: 07-10-2012 Through 12-10-2012",
}