Creation of Deep Gap States in Si During Cl₂Or Hbr Plasma Etch Exposures

Keyphrases

• Si Substrate 100%
• Plasma Etching 100%
• Reactive Ion Etching 100%
• Gap States 100%
• Magnetic Field 50%
• Phenomenological Models 50%
• Electronic Properties 50%
• Crystalline Si 50%
• Production Rate 50%
• Defected Ground Structure 50%
• Deep Level Transient Spectroscopy 50%
• Formation Mechanism 50%
• Hole Trapping 50%
• Interaction Mechanism 50%
• Material System 50%
• Multivacancy 50%
• Electron Traps 50%
• Hydrogen Interaction 50%
• Hydrogen-rich 50%
• Rich Plasma 50%
• Annealing Property 50%
• Single Vacancy 50%

Material Science

• Reactive Ion Etching 100%
• Crystalline Material 33%
• Defect Structure 33%
• Deep-Level Transient Spectroscopy 33%
• Electronic Property 33%